We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
二硫化钨薄膜的制备及发光性能.
- Authors
刘奇英; 薛思敏; 王 彤
- Abstract
Multilayer triangular WS2 films with a maximum size of 74.22 μm were prepared by atmospheric chemical vapor deposition(APCVD) method on SiO2/Si(300 nm) substrate, and WS2 films with clear edge, regular shape and a maximum size of 41.89 μm were synthesized on sapphire substrate. The prepared samples were characterized by optical microscope(OM), scanning electron microscope(SEM), Raman spectrometer and photo-emission spectrometer(PL). Combined with the morphology and size of the sample, the effects of experimental parameters such as growth temperature, dosage ratio of tungsten source and sodium chloride, and different substrates on the growth of WS2 thin films were analyzed. The experimental results show that temperature has the greatest influence on the growth of WS2 films by APCVD, and high temperature is conducive to the growth of WS2 films with high crystal quality. The higher the temperature is, the more regular the film shape is. At the optimum temperature, the smaller the wave number difference is, the fewer the film layers are, the fewer the grain defects are, and the higher the luminous intensity is. The dosage ratio of tungsten source and sodium chloride corresponding to different temperatures is different. The addition of proper amount of sodium chloride can improve the supersaturation of tungsten source in the reaction system, promote the smooth progress of the reaction, and is more conducive to the growth of WS2 thin film. The growth temperature required by the growth system for preparing WS2 thin films on different substrates is different, and the growth temperature required on sapphire substrate is higher under the same experimental conditions.
- Subjects
CHEMICAL vapor deposition; THIN films; WAVENUMBER; OPTICAL microscopes; SALT; SAPPHIRES; SCANNING electron microscopes
- Publication
Journal of Jilin University (Science Edition) / Jilin Daxue Xuebao (Lixue Ban), 2022, Vol 60, Issue 6, p1446
- ISSN
1671-5489
- Publication type
Article
- DOI
10.13413/j.cnki.jdxblxb.2021455