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- Title
Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers.
- Authors
F. Tong; K. Yapabandara; C. W. Yang; Khanal, M.; C. Jiao; Goforth, M.; Ozden, B.; A. Ahyi; Hamilton, M.; G. Niu; Ewoldt, D.A.; G. Chung; Park, M.
- Abstract
A simple and novel spectroscopic photo I-V method of diagnosing the homogeneity of electrically-active defect distribution in the large area AlGaN/GaN HEMT (high electron mobility transistor) epi-structure grown on 6-inch silicon wafers is reported. It is of utmost importance to produce the HEMT epi-structure electrically homogeneous across the wafer if devices with uniform electrical characteristics are to be constructed. AlGaN/GaN HEMT epi structures were grown on a silicon substrate via metal-organic chemical vapour deposition. An array of circular semi-transparent Ni Schottky contacts was prepared on top of the diced AlGaN/GaN HEMT structure substrates, which were selected from different locations of the 6-inch wafer. The information of the electrical homogeneity across the wafer was elucidated from the spectral dependences of the I-V characteristics collected from different locations of the AlGaN/GaN HEMT wafer. It is successfully demonstrated that the proposed spectroscopic photo I-V measurement technique can be employed to diagnose electrical homogeneity of the electrically-active defect distribution in the AlGaN/GaN HEMT epi structure constructed on Si with minimum sample preparation steps.
- Subjects
ELECTRON mobility measurement; ELECTRIC conductivity; SEMICONDUCTOR wafers; MICROELECTRONICS; SEMICONDUCTORS
- Publication
Electronics Letters (Wiley-Blackwell), 2013, Vol 49, Issue 24, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2013.3404