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- Title
Phonon populations and electrical power dissipation in carbon nanotube transistors.
- Authors
Steiner, Mathias; Freitag, Marcus; Perebeinos, Vasili; Tsang, James C.; Small, Joshua P.; Kinoshita, Megumi; Yuan, Dongning; Jie Liu; Avouris, Phaedon
- Abstract
Carbon nanotubes and graphene are candidate materials for nanoscale electronic devices. Both materials show weak acoustic phonon scattering and long mean free paths for low-energy charge carriers. However, high-energy carriers couple strongly to optical phonons, which leads to current saturation and the generation of hot phonons. A non-equilibrium phonon distribution has been invoked to explain the negative differential conductance observed in suspended metallic nanotubes, while Raman studies have shown the electrical generation of hot G-phonons in metallic nanotubes. Here, we present a complete picture of the phonon distribution in a functioning nanotube transistor including the G and the radial breathing modes, the Raman-inactive zone boundary K mode and the intermediate-frequency mode populated by anharmonic decay. The effective temperatures of the high- and intermediate-frequency phonons are considerably higher than those of acoustic phonons, indicating a phonon-decay bottleneck. Most importantly, inclusion of scattering by substrate polar phonons is needed to fully account for the observed electronic transport behaviour.
- Subjects
CARBON nanotubes; NANOELECTROMECHANICAL systems; PHONONS; NANOTUBES; RAMAN effect; SCATTERING (Physics)
- Publication
Nature Nanotechnology, 2009, Vol 4, Issue 5, p320
- ISSN
1748-3387
- Publication type
Article
- DOI
10.1038/nnano.2009.22