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- Title
TiO<sub>2</sub> blocking layer incorporated TiO<sub>2</sub>/In<sub>2</sub>O<sub>3</sub>-based photoanode for DSSC application.
- Authors
Satpute, Shital D.; Bhujbal, Pankaj K.; Shaikh, Shoyebmohamad F.; Patil, Supriya A.; Jadkar, Sandesh R.; More, Sagar A.
- Abstract
On the compact layer of TiO2, a TiO2/In2O3 photoanode was introduced to improve the performance of the TiO2/In2O3 photoanode-based dye-sensitized solar cells (DSSCs). A compact TiO2 (c-TiO2) thin films were synthesized using the chemical bath deposition (CBD) method, and a p-TiO2/In2O3 photoactive layer was deposited using the economical doctor blade method. The inherent porosity observed in the fabricated films indicates a higher propensity for adsorption of additional dye molecules. We use N3 dye to sensitize all the photoanodes. The photovoltaic properties of the deposited TiO2 compact layer incorporated TiO2/In2O3-based photoanode were compared to those of c-TiO2/p-TiO2 and p-TiO2/In2O3 photoanodes. DSSCs based on the TiO2 compact layer incorporated into the TiO2/In2O3-based photoanode exhibit an Jsc of 5.01 mA/cm2, a Voc of 0.59 V, a resistance of 222 Ω, and an FF of 0.42 with an energy conversion efficiency (η) of 1.32% at the optimal condition. It shows improved performance compared to DSSCs based only on p-TiO2/In2O3 photoanodes, which shows an Jsc of 2.5 mA/cm2, Voc of 0.54 V, a resistance of 231.02 Ω, and FF of 0.54 with a value of 0.78%, and DSSCs based on c-TiO2/p-TiO2 photoanodes, which exhibit an Jsc of 1.6 mA/cm2, a Voc of 0.56 V, a resistance of a 275.85 Ω and a FF of 0.56 with a η value of 0.48%. As a result, we conclude that c-TiO2/TiO2/In2O3 photoanode-based DSSCs show superior performance than p-TiO2/In2O3 and c-TiO2/p-TiO2-based DSSCs. Incorporating a TiO2 compact layer has the potential to improve the device’s efficiency by over 0.41% under a specific solar condition. Significant enhancements in power energy conversion efficiency (PCE) were observed, with an increase of 0.84% compared to devices utilizing c-TiO2/p-TiO2 photoanodes and a further increase of 0.54% compared to devices utilizing p-TiO2/In2O3 photoanodes.
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 36, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-023-11702-1