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- Title
Optical investigations of Cu<sub>2</sub>BaSnS<sub>4</sub> quaternary nanostructure absorbers deposited by dip-coating technique.
- Authors
Ziti, Ahmed; Hartiti, Bouchaib; Smairi, Salma; Labrim, Hicham; Nouri, Youssef; Nkuissi, Hervé Joël Tchognia; Belafhaili, Amine; Fadili, Salah; Tahri, Mounia; Thevenin, Philippe
- Abstract
In this study, semiconductor compound Cu2BaSnS4 absorber layer thin films were elaborated by the sol–gel approach associated with dip-coating deposition technique at different dipping speeds. The influence of dipping speed at different speeds of 30 mm/min, 40 mm/min, 50 mm/min, 60 mm/min and 70 mm/min, respectively, on different properties of elaborated films was investigated. X-ray diffraction (XRD), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), UV–vis spectrophotometry and four-point probe technique were employed to analyze the structural, compositional, morphological, optical and electrical properties. XRD measurements proved the formation of trigonal Cu2BaSnS4 with privileged orientation along the (100) plane. It was seen that crystallites' size of trigonal CBaTS thin films increased with the dipping speed increased from 27.93 to 41.91 nm. Secondary phase BaS2 was observed with CBaTS phase in all films. Raman spectroscopy measurements confirmed the presence of CBaTS films by the Raman peak located at 341 cm−1. EDS analyses confirmed the existence of elements composition present in CBaTS thin films. SEM micrographs showed the increase in uniformity and density of films. Also, the best surface morphology was observed at the film deposited at 70 mm/min. UV–vis spectrophotometry showed that the absorption coefficients are greater than 104 cm−1. Optical band gap of CBaTS thin films decreased from 1.61 to 1.5 eV when the dipping speed increased. The calculated electrical conductivity of CBaTS thin films was found in the range of 0.11–16.66 (Ω. cm) - 1 . These properties are interesting and show that Cu2BaSnS4 thin films can be used as a good absorber in thin film-based solar cells.
- Subjects
SEMICONDUCTOR thin films; THIN films; ULTRAVIOLET spectrophotometry; X-ray spectroscopy; RAMAN spectroscopy; ELECTRIC conductivity; COMPOUND semiconductors; BAND gaps
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 32, p24477
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-09160-2