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- Title
Dielectric properties of Bi(M<sub>2/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub> (M = Ni, Mg, Zn) ceramics.
- Authors
Ali, Asif; Salam, Amir; Khesro, Amir; Khan, Muhammad Naeem
- Abstract
Lead-free Bi(M2/3Nb1/3)O3 (M = Mg, Zn, Ni) ceramics were successfully prepared via conventional solid state sintering route and their structural, microstructural, and dielectric properties were investigated. Mg- and Ni-based samples crystallized into a single-phase cubic structure while a secondary phase was formed for Zn-based sample which was confirmed from the X-ray diffraction data. Microstructure analysis of the samples revealed non-uniform grain growth with an average grain size of 0.4, 0.5 and 2 μm for Mg, Zn, Ni-based samples, respectively. The relative permittivity at room temperature was found to be ~ 60, 105 and 140 with a tanδ < 0.02 for Mg, Zn and Ni-based samples, respectively. Among these systems, Bi(Zn2/3Nb1/3)O3 showed temperature stable relative permittivity (100 ± 15%) stable up to 200 °C. The optical band gaps of BNN, BMN and BZN were found to be 2.86, 4.10 and 4.12 eV, respectively.
- Subjects
DIELECTRIC properties; CERAMICS; BAND gaps; PERMITTIVITY; GRAIN size; X-ray diffraction; LEAD titanate
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 18, p15067
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-08424-1