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- Title
Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN films.
- Authors
Liang, Zongwen; Zhang, Xiong; Dai, Qian; Luan, Huakai; Zhao, Jianguo; Wu, Zili; Hu, Guohua; Cui, Yiping
- Abstract
The semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN films were successfully grown on $$\left(10\overline{1}0\right)$$ -oriented m-plane sapphire substrates for the first time with an indium (In)-surfactant-assisted metal-organic chemical vapor deposition (MOCVD) technology. The crystal orientation, surface morphology, and electrical properties of the grown semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN epi-layers were characterized with high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements, respectively. The XRD scanning results showed that crystalline quality for the semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN epi-layer was improved with In-surfactant. The AFM results demonstrated that the root mean square value of the semi-polar AlGaN epi-layer samples decreased with increasing the TMIn mole flow rate. Furthermore, the native electron concentration of the unintentionally doped semi-polar $$\left(11\overline{2}2\right)$$ plane AlGaN epi-layers was decreased from 2.66 × 10 to 2.97 × 10 cm due to the significant decrease in nitrogen vacancies ( V ) with indium-surfactant-assisted growth process.
- Subjects
INDIUM; GALLIUM nitride; ALUMINUM; EPITAXY; CHEMICAL vapor deposition
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 20, p15217
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-7399-z