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- Title
Highly Nonlinear Memory Selectors with Ultrathin MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction.
- Authors
Chen, Hongye; Wan, Tianqing; Zhou, Yue; Yan, Jianmin; Chen, Changsheng; Xu, Zhihang; Zhang, Songge; Zhu, Ye; Yu, Hongyu; Chai, Yang
- Abstract
Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe2 in MoS2/WSe2/MoS2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 103 A cm−2) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.
- Subjects
NONVOLATILE random-access memory; SCHOTTKY barrier; HETEROJUNCTIONS; BORON nitride; DATA warehousing; STRAY currents
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 15, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202304242