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- Title
Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction.
- Authors
Erfanian, Alireza; Mehrara, Hamed; Raissi, Farshid; Khaje, Mahdi
- Abstract
The authors report on Coulomb blockade effect in the PtSi/porous Si Schottky barrier. A model of two‐dimensional multi‐tunnelling junction (2D‐MTJ) can explain the blockade characteristic of this barrier. Using the SIMON simulator, the electrical characteristics of the proposed model were investigated. The results show that simulated current–voltage curves achieve a reasonable fit with the measured data and the present model can be used to study the PtSi/porous Si Schottky barrier behaviour. In accordance with both the studies, Coulomb blockade phenomenon is observed in current oscillation and single‐electron effect of this device at low temperatures (5 K) is justified using the 2D‐MTJ model. In addition, it indicates that by increasing the current value with temperature and for high drain voltages, PtSi/porous Si Schottky barrier behaves like a single island single‐electron tunnelling (SET) junction as previously reported by Raissi , et al.
- Publication
IET Circuits, Devices & Systems (Wiley-Blackwell), 2015, Vol 9, Issue 2, p81
- ISSN
1751-858X
- Publication type
Article
- DOI
10.1049/iet-cds.2013.0475