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Front Cover Image.
- Published in:
- InfoMat, 2021, v. 3, n. 9, p. 1, doi. 10.1002/inf2.12244
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- Article
Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability.
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- InfoMat, 2021, v. 3, n. 9, p. 1008, doi. 10.1002/inf2.12233
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- Article
Sinomenine regulates circTRPM7‐related pathway to inhibit gastric cancer cell growth and metastasis.
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- Chemical Biology & Drug Design, 2023, v. 102, n. 4, p. 870, doi. 10.1111/cbdd.14297
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- Article
Low-Energy Amorphization of Ti<sub>1</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Alloy Induced by TiTe<sub>2</sub> Nano-Lamellae.
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- Scientific Reports, 2016, p. 30645, doi. 10.1038/srep30645
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Surface etching mechanism of carbon-doped GeSbTe phase change material in fluorocarbon plasma.
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- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 9, p. 1, doi. 10.1007/s00339-016-0381-4
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- Article
Investigation of Cr(SbTe) alloy for high-speed and high-data-retention phase change random access memory applications.
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- Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 2, p. 537, doi. 10.1007/s00339-015-9211-3
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- Article
Direct atomic insight into the role of dopants in phase-change materials.
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- Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-019-11506-0
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- Article
Direct atomic insight into the role of dopants in phase-change materials.
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- Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-019-11506-0
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- Article
Characterization of Cr-doped Sb<sub>2</sub>Te<sub>3</sub> films and their application to phase-change memory.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 8, p. 470, doi. 10.1002/pssr.201510214
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- Article
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5833, doi. 10.1007/s10854-019-02605-1
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- Article
Constructing reliable PCM and OTS devices with an interfacial carbon layer.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 22, p. 20037, doi. 10.1007/s10854-019-02373-y
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- Article
CrSbTe materials for phase change memory with high speed and good thermal stability performance.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4138, doi. 10.1007/s10854-015-2958-7
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- Article
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>.
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- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0114-7
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- Article
One order of magnitude faster phase change at reduced power in Ti-Sb-Te.
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- Nature Communications, 2014, v. 5, n. 7, p. 4086, doi. 10.1038/ncomms5086
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- Article
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics.
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- Nano-Micro Letters, 2021, v. 13, n. 1, p. 1, doi. 10.1007/s40820-020-00557-4
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- Article
Atomic scale insight into the effects of Aluminum doped Sb<sub>2</sub>Te for phase change memory application.
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- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-33421-y
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- Article
Ultrahigh drive current and large selectivity in GeS selector.
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- Nature Communications, 2020, v. 11, n. 1, p. N.PAG, doi. 10.1038/s41467-020-18382-z
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- Article