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- Title
GaN HEMTs with quaternary In<sub>0.05</sub>Al<sub>0.75</sub>Ga<sub>0.2</sub>N Schottky barrier layer.
- Authors
Hwang, Ji Hyun; Kim, Se‐Mi; Woo, Jeong Min; Hong, Sung‐Min; Jang, Jae‐Hyung
- Abstract
A quaternary InAlGaN Schottky barrier layer is used in GaN high electron mobility transistors (HEMTs) in this study. For potential application to high speed electronic devices, GaN HEMTs with a quaternary InAlGaN Schottky barrier layer are fabricated and characterized. The fabricated device shows a maximum drain current density of 1.8 A mm−1, a maximum trans-conductance of 557 mS mm−1, on/off current ratio higher than 105, a subthreshold swing (S.S.) of 140 mV/decade, and a gate-diode leakage current of 1.2 mA mm−1. For the device with a 100-nm-long gate footprint, a current gain cut-off frequency ( fT) of 102 GHz and a maximum oscillation frequency ( fmax) of 130 GHz are extracted at the same bias condition ( VDS = 8 V and VGS = −2.2 V) whose Lg · fT product is evaluated to be 10.2 GHz · µm.
- Subjects
SEMICONDUCTOR-metal boundaries; SCHOTTKY barrier; SCHOTTKY barrier diodes; METAL semiconductor field-effect transistors; FIELD-effect transistors
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 4, p889
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532566