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- Title
Oxide electronics: Transistors pick up steam.
- Authors
Keszler, Douglas
- Abstract
The article focuses on the study conducted by researcher K.K. Banger and team, and published in the journal "Nature Materials," according to which high performance thin film transistors (TFL) are formed below 250 degrees celsius using precursors, hydrolyzed on chip. It mentions that amorphous film of the semiconductor zinc indium oxide is formed after the process. It states that the TLF have several combination of poor morphology including low density and high porosity.
- Subjects
THIN film transistors; TRANSISTORS; AMORPHOUS semiconductors; ELECTRONICS; ZINC; POROSITY
- Publication
Nature Materials, 2011, Vol 10, Issue 1, p9
- ISSN
1476-1122
- Publication type
Article
- DOI
10.1038/nmat2932