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- Title
HIGH EFFICIENCY L-BAND GAN POWER AMPLIFIER.
- Authors
AICH, S.; DHAR, J.; GARG, S. K.; BAKORI, B. V.; ARORA, R. K.
- Abstract
This article illustrates the design and development of a 60 Wpulsed Class F power amplifier over the frequency range of 1.25 GHz ± 50 MHz. The power amplifier has been designed and fabricated using a GaN HEMT transistor This amplifier shows a competitive drain efficiency of 70 percent with a pulse output power of 60 W over the bandwidth of 100 MHz and a compressed gain of 15 dB. It has been fabricated and tested using an alumina substrate (ϵr=9.9) with three layers of metallization (Cr-Cu-Au) and the measured result is congruent with the simulated results. A comparison of linearity performance between a Class AB and Class F amplifier using the same GaN HEMT device is also presented.
- Subjects
POWER amplifiers; ELECTRONIC amplifiers design &; construction; POWER transistors; BANDWIDTHS; SIMULATION methods &; models
- Publication
Microwave Journal, 2011, Vol 54, Issue 10, p88
- ISSN
0192-6225
- Publication type
Article