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- Title
电场对含空位缺陷硅结构影响的第一性原理研究.
- Authors
秦汉; 盛洁; 李雷; 朱灿焰; 毛凌锋
- Abstract
By using molecular dynamic simulation method and first principle calculations method, the influence of electric field on silicon with vacancies were investigated. The molecular dynamics results demonstrate that the vacancy quantity in Si (100) surface increases along with the increase of electric field in general. The vacancy quantity reaches and keeps a maximum saturation value of 10, when the electric field is between 8.90×106 V/cm and 1.35×107 V/cm. The first principle calculations reveal that the tunneling current is enhanced in vacancy structure. It is owing to that the gap value between valence band and conduction band is reduced by the defect levels in band structure. Besides, the static dielectric constant in vacancy structure gets lager, resulting in higher capacitor-voltage value.
- Publication
Electronic Components & Materials, 2018, Vol 37, Issue 3, p10
- ISSN
1001-2028
- Publication type
Article
- DOI
10.14106/j.cnki.1001-2028.2018.03.002