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Highly efficient silicon light emitting diodes produced by doping engineering.
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- Frontiers of Optoelectronics, 2012, v. 5, n. 1, p. 7, doi. 10.1007/s12200-012-0226-5
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- Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
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- Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
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- Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
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- Article
Theoretical description of high-temperature implantation of silicon carbide with N[sup +] and Al[sup +] ions.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 17, doi. 10.1134/1.1261975
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- Article
High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 617, doi. 10.1134/1.1261883
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- Article
Light-emitting silicon pn diodes.
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- Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 4, p. 471, doi. 10.1007/s00339-003-2406-z
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- Article
Group-IV nanocluster formation by ion-beam synthesis.
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- Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 7, p. 1049, doi. 10.1007/s00339-002-1947-x
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- Article
Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C[sup +] and Si[sup +] ions.
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- Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 827
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- Article
Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.
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- Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 823, doi. 10.1007/s00339-002-1963-x
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- Article
Comparative Study of SIMOX Structures Using Four Analytical Techniques.
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- Surface & Interface Analysis: SIA, 1996, v. 24, n. 4, p. 243, doi. 10.1002/(SICI)1096-9918(199604)24:4<243::AID-SIA106>3.0.CO;2-H
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- Article
Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.
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- Applied Physics B: Lasers & Optics, 2002, v. 74, n. 1, p. 53, doi. 10.1007/s003400100771
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- Article
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.
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- Applied Physics B: Lasers & Optics, 2000, v. 71, n. 2, p. 131, doi. 10.1007/PL00006966
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- Article
Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer.
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- Acta Physica Polonica: A, 2014, v. 125, n. 6, p. 1404, doi. 10.12693/APhysPolA.125.1404
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- Article
Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors.
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- Acta Physica Polonica: A, 2013, v. 123, n. 5, p. 916, doi. 10.12693/APhysPolA.123.916
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- Article
Fabrication of Si<sub>1-x</sub>Ge<sub>x</sub> Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing.
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- Acta Physica Polonica: A, 2013, v. 123, n. 5, p. 858, doi. 10.12693/APhysPolA.123.858
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- Article
Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing.
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- Acta Physica Polonica: A, 2011, v. 120, n. 1, p. 30, doi. 10.12693/APhysPolA.120.30
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- Article
Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
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- Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469
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- Article
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
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- Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
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- Article
Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.
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- Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944
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- Article
Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
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- Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
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- Article
Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions
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- Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417
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- Article
Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
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- Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
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- Article
SiO compound formation by oxygen ion implantation into silicon.
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- Surface & Interface Analysis: SIA, 1985, v. 7, n. 5, p. 207, doi. 10.1002/sia.740070502
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- Article
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy.
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- Scientific Reports, 2015, p. 8329, doi. 10.1038/srep08329
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- Article
Płucne objawy raka jądra (kto pierwszy powinien rozpoznać)?
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- Polish Pneumonology & Allergology / Pneumonologia i Alergologia Polska, 2012, v. 80, n. Supp 1, p. 13
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- Article
Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling.
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- Journal of Low Temperature Physics, 2015, v. 180, n. 5/6, p. 342, doi. 10.1007/s10909-015-1318-6
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- Article
Buried (Fe[sub 1-x] Co[sub x] )Si[sub 2] layers with variable band gap formed by ion beam synthesis.
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- Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 2, p. 155, doi. 10.1007/BF01575713
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- Article
Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing.
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- Applied Physics B: Lasers & Optics, 2010, v. 101, n. 1/2, p. 315, doi. 10.1007/s00340-010-4140-5
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- Article
Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.
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- Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 439, doi. 10.1007/s00340-009-3729-z
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- Article
Blue electroluminescence of ytterbium clusters in SiO<sub>2</sub> by co-operative up-conversion.
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- Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 451, doi. 10.1007/s00340-009-3751-1
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- Article
Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.
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- Applied Physics B: Lasers & Optics, 2009, v. 94, n. 2, p. 289, doi. 10.1007/s00340-008-3338-2
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- Article
Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.
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- Applied Physics B: Lasers & Optics, 2008, v. 91, n. 1, p. 123, doi. 10.1007/s00340-008-2948-z
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- Publication type:
- Article
Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO<sub>2</sub> layers.
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- Applied Physics B: Lasers & Optics, 2007, v. 88, n. 2, p. 241, doi. 10.1007/s00340-007-2700-0
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- Publication type:
- Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
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- Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
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- Article