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- Title
Physical Insights into THz Rectification in Metal–Oxide–Semiconductor Transistors.
- Authors
Palma, Fabrizio
- Abstract
Metal–oxide–semiconductor field-effect transistors (MOSFETs) have proven to be effective devices for rectifying electromagnetic radiation at extremely high frequencies, approximately 1 THz. This paper presents a new interpretation of the THz rectification process in the structure of an MOS transistor. The rectification depends on the nonlinear effect of the carrier dynamics. The paper shows that the so-called self-mixing effect occurs within the interface region between the source and the channel. The basic tool used numerical TCAD simulations, which offer a direct interpretation of different aspects of this interaction. The complex, 2D effect is examined in terms of its basic aspects by comparing the MOS structure with a simplified case study structure. We demonstrate that a contribution to the output-rectified voltage detectable at the drain arises from the charging of the drain well capacitance due to the diffusion of excess electrons from the self-mixing interaction occurring at the source barrier. In addition, the paper provides a quantitative description of the rectification process through the definition of the output equivalent circuit, offering a new perspective for the design of detection systems.
- Subjects
RECTIFICATION (Electricity); FIELD-effect transistors; EXCESS electrons; ELECTROMAGNETIC radiation; ELECTRON diffusion; ELECTROMAGNETIC devices; TRANSISTORS; METAL oxide semiconductor field-effect transistors
- Publication
Electronics (2079-9292), 2024, Vol 13, Issue 7, p1192
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics13071192