We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Ballistic Performance of Quasi-One-Dimensional Hafnium Disulfide Field-Effect Transistors.
- Authors
Matić, Mislav; Poljak, Mirko
- Abstract
Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices, and patterning it into quasi-one-dimensional HfS2 nanoribbons (HfS2NRs) enables multi-channel architectures for field-effect transistors (FETs). Electronic, transport and ballistic device characteristics are studied for sub-7 nm-wide and ~15 nm-long zigzag HfS2NR FETs using non-equilibrium Green's functions (NEGF) formalism with density functional theory (DFT) and maximally localized Wannier functions (MLWFs). We provide an in-depth analysis of quantum confinement effects on ON-state performance. We show that bandgap and hole transport mass are immune to downscaling effects, while the ON-state performance is boosted by up to 53% but only in n-type devices. Finally, we demonstrate that HfS2NR FETs can fulfill the industry requirements for future technology nodes, which makes them a promising solution for FET architectures based on multiple nanosheets or nanowires.
- Subjects
FIELD-effect transistors; NANOELECTROMECHANICAL systems; HAFNIUM; GREEN'S functions; QUANTUM confinement effects; N-type semiconductors
- Publication
Electronics (2079-9292), 2024, Vol 13, Issue 6, p1048
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics13061048