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- Title
Effects of Gate-Length Scaling on Microwave MOSFET Performance.
- Authors
Crupi, Giovanni; Schreurs, Dominique M. M.-P.; Caddemi, Alina
- Abstract
This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic unity current-gain cutoff frequency, which is a crucial figure of merit for assessing the high-frequency performance. The experimental data show that the cutoff frequency of the tested devices exhibits a nearly ideal scaling behavior with decreasing gate length.
- Subjects
PERFORMANCE of metal oxide semiconductor field-effect transistors; PARAMETER estimation; SIGNAL processing; PHYSICAL measurements; SCATTERING (Physics)
- Publication
Electronics (2079-9292), 2017, Vol 6, Issue 3, p62
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics6030062