Found: 22
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InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates.
- Published in:
- Russian Physics Journal, 2014, v. 57, n. 3, p. 359, doi. 10.1007/s11182-014-0247-1
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- Article
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.
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- Russian Physics Journal, 2013, v. 56, n. 1, p. 55, doi. 10.1007/s11182-013-9994-7
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- Article
Correction to: Low-threshold topological nanolasers based on the second-order corner state.
- Published in:
- 2021
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- Publication type:
- Correction Notice
Low-threshold topological nanolasers based on the second-order corner state.
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- Light: Science & Applications, 2020, v. 9, n. 1, p. 1, doi. 10.1038/s41377-020-00352-1
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- Article
Topological Nanophotonics: Cavity Quantum Electrodynamics with Second‐Order Topological Corner State (Laser Photonics Rev. 14(8)/2020).
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- Laser & Photonics Reviews, 2020, v. 14, n. 8, p. 1, doi. 10.1002/lpor.202070047
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- Article
Cavity Quantum Electrodynamics with Second‐Order Topological Corner State.
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- Laser & Photonics Reviews, 2020, v. 14, n. 8, p. 1, doi. 10.1002/lpor.201900425
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- Article
GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.
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- Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-218
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- Publication type:
- Article
High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature.
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- Crystals (2073-4352), 2023, v. 13, n. 10, p. 1417, doi. 10.3390/cryst13101417
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- Publication type:
- Article
Light Hole Excitons in Strain-Coupled Bilayer Quantum Dots with Small Fine-Structure Splitting.
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- Crystals (2073-4352), 2022, v. 12, n. 8, p. 1116, doi. 10.3390/cryst12081116
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- Publication type:
- Article
Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement.
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- Crystals (2073-4352), 2021, v. 11, n. 10, p. 1194, doi. 10.3390/cryst11101194
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- Publication type:
- Article
High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer.
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- Applied Sciences (2076-3417), 2023, v. 13, n. 9, p. 5506, doi. 10.3390/app13095506
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- Publication type:
- Article
Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03358-1
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- Publication type:
- Article
Study on the asymmetry of nanopore in Al droplet etching.
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- Optical & Quantum Electronics, 2021, v. 53, n. 8, p. 1, doi. 10.1007/s11082-021-03011-w
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- Publication type:
- Article
Watt-level continuous-wave antimonide laser diodes with high carrier-confined active region above 2.5 µm.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-03989-8
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- Publication type:
- Article
Coupling Performance Enhancement of GaSb-Based Single-Transverse-Mode Lasers with Reduced Beam Divergence Obtained via near Field Modulation.
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- Photonics, 2022, v. 9, n. 12, p. 942, doi. 10.3390/photonics9120942
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- Publication type:
- Article
Bright semiconductor single-photon sources pumped by heterogeneously integrated micropillar lasers with electrical injections.
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- Light: Science & Applications, 2023, v. 12, n. 1, p. 1, doi. 10.1038/s41377-023-01110-9
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- Publication type:
- Article
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application.
- Published in:
- Materials (1996-1944), 2012, v. 5, n. 12, p. 2917, doi. 10.3390/ma5122917
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- Publication type:
- Article
Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1355, doi. 10.1049/el.2015.1041
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- Publication type:
- Article
Resonant tunnelling diode photodetector operating at near‐infrared wavelengths with high responsivity.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1355, doi. 10.1049/el.2015.1041
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- Publication type:
- Article
Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 13, p. 1959, doi. 10.3390/nano13131959
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- Publication type:
- Article
Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 1219, doi. 10.3390/nano12071219
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- Publication type:
- Article
Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1136, doi. 10.3390/nano11051136
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- Publication type:
- Article