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- Title
Low-Temperature Processing of High-Performance 0.74Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.26PbTiO<sub>3</sub> Thin Films on La<sub>0.6</sub>Sr<sub>0.4</sub>CoO<sub>3</sub>-Buffered Si Substrates for Pyroelectric Arrays Applications.
- Authors
Tang, Yanxue; Zhou, Dan; Tian, Yue; Li, Xia; Wang, Feifei; Sun, Dazhi; Shi, Wangzhou; Tian, Li; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao; Lupascu, D.
- Abstract
To prepare high-performance ferroelectric thin films on Si substrates for pyroelectric arrays applications, 0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 ( PMN-PT) thin films, with composition beyond morphotropic phase boundary, were deposited by radio-frequency magnetron sputtering. Conductive perovskite La0.6Sr0.4CoO3 with resistivity of about 20 μΩ cm was used as a buffer layer between PMN-PT and Pt/Ti/SiO2/Si substrates to promote perovskite phase formation for the PMN-PT thin films. The PMN-PT thin films with pure perovskite phase have been obtained at temperatures as low as 500°C, which is compatible with integrated circuits. The ferroelectric, dielectric, and pyroelectric properties of the films were investigated. It is found that the films exhibit a large remnant polarization of 29.2 μC/cm2 and a high pyroelectric coefficient of 9.4 × 10−4 C/m2 K at room temperature. The calculated figures of merit for current responsivity, voltage responsivity, and detectivity are 3.76 × 10−10 m/V, 0.02 m2/C, and 1.29 × 10−5 Pa−1/2, respectively. These features suggest the film a promising material for thermal imaging applications based on silicon technology.
- Publication
Journal of the American Ceramic Society, 2012, Vol 95, Issue 4, p1367
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1551-2916.2011.04976.x