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- Title
Dielectric Measurements of Nanocrystalline VO<sub>2</sub>:Fe Films.
- Authors
Ilinskiy, A. V.; Castro, R. A.; Klimov, V. A.; Kononov, A. A.; Shadrin, E. B.
- Abstract
Dielectric spectroscopy methods revealed the existence of two types of relaxation processes in the semiconductor phase of VO2:Fe films. The characteristic relaxation times are denoted by τ1 and τ2. It is shown that the temperature dependences of τ1 and τ2 have hysteresis, the position of the loops of which coincides with the points of the semiconductor-metal phase transition in VO2:Fe films. τ1 corresponds to undoped, and τ2 corresponds to Fe-doped nanocrystallites of the VO2 film. It is shown that the physical mechanism of the relaxation process is due to the establishment of equilibrium after the action of an electric field on conduction electrons. The numerical values of the parameters of the distribution of relaxers over relaxation times are determined.
- Subjects
DIELECTRIC measurements; PHASE transitions; ELECTRIC conductivity; METAL-insulator transitions; ELECTRIC fields; CONDUCTION electrons
- Publication
Optics & Spectroscopy, 2023, Vol 131, Issue 4, p218
- ISSN
0030-400X
- Publication type
Article
- DOI
10.1134/S0030400X23030104