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Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory.
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- Advanced Functional Materials, 2010, v. 20, n. 18, p. 2989, doi. 10.1002/adfm.201000599
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- Article
Production of C, N Alternating 2D Materials Using Covalent Modification and Their Electroluminescence Performance.
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- Small Science, 2021, v. 1, n. 2, p. 1, doi. 10.1002/smsc.202000042
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- Article
Cu Diffusion-Driven Dynamic Modulation of the Electrical Properties of Amorphous Oxide Semiconductors.
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- Advanced Functional Materials, 2017, v. 27, n. 25, p. n/a, doi. 10.1002/adfm.201700336
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- Article
Development of Reflow Fill of CGeSbTe Films for Sub‐20 nm Cells in 3D Cross‐Point Memory.
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- Advanced Materials Technologies, 2023, v. 8, n. 1, p. 1, doi. 10.1002/admt.202200887
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- Article
A band-gap database for semiconducting inorganic materials calculated with hybrid functional.
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- Scientific Data, 2020, v. 7, n. 1, p. N.PAG, doi. 10.1038/s41597-020-00723-8
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- Article
Supramolecular Cl⋅⋅⋅H and O⋅⋅⋅H Interactions in Self-Assembled 1,5-Dichloroanthraquinone Layers on Au(111).
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- ChemPhysChem, 2013, v. 14, n. 6, p. 1177, doi. 10.1002/cphc.201201061
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- Article
Property database for single-element doping in ZnO obtained by automated first-principles calculations.
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- Scientific Reports, 2017, p. 40907, doi. 10.1038/srep40907
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- Article
Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity.
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- Scientific Reports, 2016, p. 35148, doi. 10.1038/srep35148
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- Article
Field-like spin–orbit torque induced by bulk Rashba channels in GeTe/NiFe bilayers.
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- NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00344-6
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- Article
Field-like spin–orbit torque induced by bulk Rashba channels in GeTe/NiFe bilayers.
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- NPG Asia Materials, 2021, v. 13, n. 1, p. 1, doi. 10.1038/s41427-021-00344-6
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- Article
Multiscale simulation on electromigration of the oxygen vacancies in metal oxides.
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- Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 909, doi. 10.1007/s00339-011-6272-9
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- Article
Role of Transition Metal in Fast Oxidation Reaction on the Pt<sub>3</sub>TM (111) (TM = Ni, Co) Surfaces.
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- Advanced Energy Materials, 2013, v. 3, n. 10, p. 1257, doi. 10.1002/aenm.201300166
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- Article
Al-Doped TiO<sub>2</sub> Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors.
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- Advanced Materials, 2008, v. 20, n. 8, p. 1429, doi. 10.1002/adma.200701085
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- Article
Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-021-00280-7
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- Article
Accelerated identification of equilibrium structures of multicomponent inorganic crystals using machine learning potentials.
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- NPJ Computational Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41524-022-00792-w
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- Article
Metadynamics sampling in atomic environment space for collecting training data for machine learning potentials.
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- NPJ Computational Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1038/s41524-021-00595-5
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- Article
In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide.
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- Advanced Science, 2023, v. 10, n. 7, p. 1, doi. 10.1002/advs.202205725
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- Article
Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-60772-2
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- Article
Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO<sub>2</sub> film on Ge substrate for interface passivation.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 9, p. 511, doi. 10.1002/pssr.201510237
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- Article
Investigation of the mechanism of the anomalous Hall effects in Cr<sub>2</sub>Te<sub>3</sub>/(BiSb)<sub>2</sub>(TeSe)<sub>3</sub> heterostructure.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00360-y
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- Article
Correction: Investigation of the mechanism of the anomalous Hall effects in Cr<sub>2</sub>Te<sub>3</sub>/(BiSb)<sub>2</sub>(TeSe)<sub>3</sub> heterostructure.
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- 2023
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- Correction Notice
The Nature of the Oxygen Vacancy in Amorphous Oxide Semiconductors: Shallow Versus Deep.
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- Physica Status Solidi (B), 2019, v. 256, n. 3, p. N.PAG, doi. 10.1002/pssb.201800486
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- Article
Source of instability at the amorphous interface between InGaZnO.
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- Physica Status Solidi (B), 2015, v. 252, n. 8, p. 1872, doi. 10.1002/pssb.201451767
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- Article
Fast and scalable memory characteristics of Ge-doped SbTe phase change materials.
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- Physica Status Solidi (B), 2012, v. 249, n. 10, p. 1985, doi. 10.1002/pssb.201200419
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- Article
Organolead Halid Perovskites: Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching (Adv. Mater. 31/2016).
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- Advanced Materials, 2016, v. 28, n. 31, p. 6517, doi. 10.1002/adma.201670211
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- Article
Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.
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- Advanced Materials, 2016, v. 28, n. 31, p. 6562, doi. 10.1002/adma.201600859
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- Article
Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias.
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- Advanced Materials, 2016, v. 28, n. 2, p. 335, doi. 10.1002/adma.201502916
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- Article
Origin of p‐Type Conduction in Amorphous CuI: A First‐Principles Investigation.
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- Physica Status Solidi (B), 2020, v. 257, n. 9, p. 1, doi. 10.1002/pssb.202000218
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- Article
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers.
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- Scientific Reports, 2015, p. 7884, doi. 10.1038/srep07884
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- Article
Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep03765
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- Article
Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor.
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- NPJ Computational Materials, 2018, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41524-018-0073-z
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- Article
High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics.
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- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-33095-6
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- Article
Atomic structure of conducting nanofilaments in TiO<sub>2</sub> resistive switching memory.
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- Nature Nanotechnology, 2010, v. 5, n. 2, p. 148, doi. 10.1038/nnano.2009.456
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- Article
Identification of Active Sites for CO<sub>2</sub> Reduction on Graphene‐Supported Single‐Atom Catalysts.
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- ChemSusChem, 2021, v. 14, n. 11, p. 2475, doi. 10.1002/cssc.202100757
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- Article
Unveiling Electrochemical Reaction Pathways of CO<sub>2</sub> Reduction to C<sub>N</sub> Species at S‐Vacancies of MoS<sub>2</sub>.
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- ChemSusChem, 2019, v. 12, n. 12, p. 2671, doi. 10.1002/cssc.201900779
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- Article