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- Title
Raman study of insulating and conductive ZnO:(Al, Mn) thin films.
- Authors
Cerqueira, M. F.; Viseu, T.; Ayres de Campos, J.; Rolo, A. G.; de Lacerda‐Aroso, T.; Oliveira, F.; Bogdanovic‐Radovic, I.; Alves, E.; Vasilevskiy, M. I.
- Abstract
Raman spectroscopy results obtained for undoped and Al- and/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either co-sputtering or ion implantation), the dopant type, and its concentration on the Raman-active vibrational modes in these films were studied in detail. The results are discussed with focus on the peak shifts and broadening, and on the doping-induced relaxation of the symmetry selection rules. A particular attention is paid to the 520-530 cm−1 Raman band observed in all Mn containing samples and a simple theoretical model and arguments are presented in support of its relation to the local (gap) phonon mode produced by Mn atoms substituting Zn in the cationic sublattice of the ZnO crystal.
- Subjects
ZINC oxide thin films; RAMAN spectroscopy; OPTICAL properties of zinc oxide; PHONONS; ZINC oxide films
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 10, p2345
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532162