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Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3.
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- Journal of Electronic Materials, 2020, v. 49, n. 1, p. 297, doi. 10.1007/s11664-019-07728-z
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- Article
Investigation on deep level defects in rapid thermal annealed undoped n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3
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- Article
Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4
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Structural, Chemical and Electrical Properties of Au/La<sub>2</sub>O<sub>3</sub>/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer.
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- Journal of Electronic Materials, 2019, v. 48, n. 7, p. 4217, doi. 10.1007/s11664-019-07193-8
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Analysis of Schottky Barrier Parameters and Current Transport Properties of V/p-Type GaN Schottky Junction at Low Temperatures.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 4140, doi. 10.1007/s11664-018-6313-7
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Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer.
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- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5746, doi. 10.1007/s11664-017-5611-9
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- Article
Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.
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- Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y
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Electrical Properties and Current Transport Mechanisms of the Au/ n-GaN Schottky Structure with Solution- Processed High- k BaTiO Interlayer.
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- Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3499, doi. 10.1007/s11664-014-3177-3
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- Article
Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode.
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- Journal of Electronic Materials, 2013, v. 42, n. 6, p. 1282, doi. 10.1007/s11664-013-2592-1
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- Article
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1511-3
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- Article
Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode.
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- Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 3, p. 1379, doi. 10.1007/s00339-014-8238-1
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- Article
Effect of annealing temperature on the electrical properties of Au/TaO/n-GaN metal-insulator-semiconductor (MIS) structure.
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- Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 3, p. 713, doi. 10.1007/s00339-013-7797-x
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Electrical and structural properties of Pd/V/ n-type InP (111) Schottky structure as a function of annealing temperature.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 1, p. 98, doi. 10.1002/sia.3778
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Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n-type GaN.
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- Surface & Interface Analysis: SIA, 2011, v. 43, n. 9, p. 1251, doi. 10.1002/sia.3706
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- Article
Potato Chip-Like 0D Interconnected ZnCo 2 O 4 Nanoparticles for High-Performance Supercapacitors.
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- Crystals (2073-4352), 2021, v. 11, n. 5, p. 469, doi. 10.3390/cryst11050469
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- Article
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 10, p. 1, doi. 10.1007/s00339-021-04945-4
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Effect of Temperature on the Electrical and Current Transport Properties of Au/Nd2O3/n-GaN Metal/Interlayer/Semiconductor (MIS) Junction.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 2, p. 1, doi. 10.1007/s00339-021-04302-5
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Effects of 10 MeV Electron Irradiation on Electrical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes.
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- Semiconductors, 2024, v. 58, n. 6, p. 512, doi. 10.1134/S1063782624600785
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Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes.
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- Semiconductors, 2020, v. 54, n. 12, p. 1641, doi. 10.1134/S1063782620120155
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Electrical properties and the determination of interface state density from I- V, C- f and G- f measurements in Ir/Ru/ n-InGaN Schottky barrier diode.
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- Semiconductors, 2017, v. 51, n. 12, p. 1641, doi. 10.1134/S1063782617120156
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Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V<sub>2</sub>O<sub>5</sub> interfacial layer.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 19, p. 1, doi. 10.1007/s10854-024-13038-w
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- Article
Chemical states, structural, electronic possessions, and conduction phenomena of Ti/MoO<sub>3</sub>/p-InP heterojunctions with a high-k molybdenum trioxide interlayer.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 6, p. 1, doi. 10.1007/s10854-024-12159-6
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Analysis of microstructure, chemical state and electrical features of Ti/WO<sub>3</sub>/p-InP heterojunction with a tungsten oxide insulating layer.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 19, p. 1, doi. 10.1007/s10854-023-10893-x
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Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 8092, doi. 10.1007/s10854-021-05532-2
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Effect of rare-earth Pr<sub>6</sub>O<sub>11</sub> insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18710, doi. 10.1007/s10854-019-02224-w
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Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 22, p. 16903, doi. 10.1007/s10854-017-7609-8
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Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4847, doi. 10.1007/s10854-016-6131-8
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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 5, p. 2379, doi. 10.1007/s10854-014-1891-5
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Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 854, doi. 10.1007/s10854-010-0225-5
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Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 286, doi. 10.1007/s10854-010-0129-4
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The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 8, p. 804, doi. 10.1007/s10854-009-9996-y
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- Article
SYNTHESIS AND CHARACTERIZATION OF NICKEL DOPED CdS NANOPARTICLES.
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- International Journal of Nanoscience, 2012, v. 11, n. 3, p. 1240006-1, doi. 10.1142/S0219581X12400066
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- Article
Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 10, p. 2027, doi. 10.1002/pssa.201228224
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PREPARATION AND CHARACTERIZATION OF CdS NANOPARTICLES BY CHEMICAL CO-PRECIPITATION TECHNIQUE.
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- Chalcogenide Letters, 2011, v. 8, n. 3, p. 177
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STRUCTURAL CHARACTERIZATION ON NICKEL DOPED CADMIUM SULFIDE.
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- Chalcogenide Letters, 2011, v. 8, n. 1, p. 53
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INFLUENCE ON OPTICAL PROPERTIES OF NICKEL DOPED CADMIUM SULFIDE.
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- Chalcogenide Letters, 2011, v. 8, n. 1, p. 39
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- Article
Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 105, doi. 10.1002/pssa.201127394
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Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n-type InP.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 10, p. 2406, doi. 10.1002/pssa.201127192
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- Article
Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1670, doi. 10.1002/pssa.201026748
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- Article
Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN.
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- Journal of Metallurgy, 2012, p. 1, doi. 10.1155/2012/531915
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Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface.
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- Journal of Applied Polymer Science, 2014, v. 131, n. 2, p. n/a, doi. 10.1002/app.39773
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- Article
Analysis of temperature-dependent Schottky barrier parameters of Cu-Au Schottky contacts to n-InP.
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- Canadian Journal of Physics, 2012, v. 90, n. 1, p. 73, doi. 10.1139/p11-142
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Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process.
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- Journal of Materials Science, 2011, v. 46, n. 2, p. 558, doi. 10.1007/s10853-010-5020-4
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Studies on zirconium nitride films deposited by reactive magnetron sputtering.
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- Crystal Research & Technology, 2003, v. 38, n. 12, p. 1047
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- Article