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- Title
Nonvolatile Memory: Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM (Adv. Electron. Mater. 2/2019).
- Authors
Chen, Zhiwei; Huang, Weichuan; Zhao, Wenbo; Hou, Chuangming; Ma, Chao; Liu, Chuanchuan; Sun, Haoyang; Yin, Yuewei; Li, Xiaoguang
- Abstract
Sub‐nanosecond (≈540 ps) resistive switching with high off/on resistance ratio is demonstrated in an Au/YIG/n‐Si resistive random access memory (RRAM) at room temperature and 85 °C in article number 1800418 by Yuewei Yin, Xiaoguang Li, and co‐workers. Five discrete resistance levels with ultrafast switching clearly show reliable retentions. Such an RRAM is promising for next‐generation non‐volatile memories with ultrahigh speed, low power consumption, and high density.
- Subjects
NONVOLATILE random-access memory; SWITCHING theory; YTTRIUM iron garnet
- Publication
Advanced Electronic Materials, 2019, Vol 5, Issue 2, pN.PAG
- ISSN
2199-160X
- Publication type
Cover Art
- DOI
10.1002/aelm.201970008