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- Title
Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol-Gel Method.
- Authors
Vettumperumal, R.; Kalyanaraman, S.; Thangavel, R.
- Abstract
Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol-gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron-phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1-2mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.
- Subjects
RUTHENIUM; ZINC oxide thin films; SOL-gel processes; NANOCRYSTALS; SPIN coating; X-ray diffraction
- Publication
Journal of Molecular & Engineering Materials, 2017, Vol 5, Issue 1, p-1
- ISSN
2251-2373
- Publication type
Article
- DOI
10.1142/S2251237317500046