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- Title
Low-Temperature Growth of Inverted Hexagonal ZnS/CdS Quantum Dots: Functional and Luminescence Properties.
- Authors
Kumar, Hitanshu; Barman, P.; Singh, Ragini
- Abstract
A novel low-temperature wet chemical method is proposed for direct growth of type-I inverted hexagonal ZnS/CdS quantum dots (QD). 2-Mercaptoethanol (2-ME) was used as a capping agent for confinement by passivation, and also helped to prevent agglomeration of the QD. The band gap calculated from optical absorption spectra was 2.63 eV for the smallest core/shell QD. Absorption edge onset and results from transmission electron microscopy revealed formation of inverted core/shell QD. X-ray diffraction studies revealed the ZnS/CdS had a stable hexagonal crystal structure at low temperature. The average diameter of the core/shell QD was 4.2 nm. Tunable luminescence with substantial tunability was revealed by study of the photoluminescence of the inverted ZnS/CdS quantum dots. Surface passivation of ZnS/CdS QD by 2-ME was confirmed by Fourier-transform infrared spectroscopy. Graphical Abstract: [Figure not available: see fulltext.]
- Subjects
ZINC sulfide; QUANTUM dots; LOW temperatures; LUMINESCENCE; CRYSTAL growth; MERCAPTOETHANOL
- Publication
Journal of Electronic Materials, 2015, Vol 44, Issue 2, p675
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-014-3567-6