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- Title
Alkoxysilane‐Treated SnO<sub>2</sub> Interlayer for Energy Band Alignment of SnO<sub>2</sub> Electron Injection Layer in Inverted Perovskite Light‐Emitting Diodes.
- Authors
Kim, Yu Jin; Kim, Bong Woo; Im, Sang Hyuk
- Abstract
Efficient inverted perovskite light‐emitting diodes (PeLEDs) are demonstrated by the introduction of tetraethyl orthosilicate (TEOS)‐incorporated tin oxide (SnO2) interlayer between the SnO2 electron injection layer and the perovskite emission layer. The TEOS incorporation into the SnO2 solution spontaneously converts it to a SiO2–SnO2 composite colloidal solution with a wide band gap, thermal stability, transparency, and chemical stability toward perovskite. The TEOS‐incorporated SnO2 interlayer effectively restricts the charge transfer from perovskite into SnO2 and promotes electron injection from SnO2 into perovskite due to the shift toward favorable energy band alignment. In addition, the TEOS‐treated interlayer balances the electron injection rate and the hole injection rate, thereby facilitating radiative recombination of the charge carriers injected into perovskite. As a result, the inverted PeLEDs exhibit significantly improved performance of 33 996 cd m−2 luminance, 9.99% of external quantum efficiency, and 44.83 cd A−1 of current efficiency.
- Subjects
LIGHT emitting diodes; ENERGY bands; EXCIMERS; PEROVSKITE; TIN oxides; CHARGE carriers; ELECTRON transport; BAND gaps
- Publication
Advanced Materials Interfaces, 2024, Vol 11, Issue 16, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.202400020