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- Title
β-Radiation-induced decrease of adhesion in AlN/Si structure.
- Authors
Golovin, Yu.; Dmitrievskiy, A.; Efremova, N.
- Abstract
We have studied the effect of low-intensity ( I ∼ 1.2 × 10 cm s) β radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of f = 2.16 × 10 cm exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.
- Subjects
MOLECULAR structure; ADHESION; SUBSTRATES (Materials science); ALUMINUM nitride; METALLIC glasses
- Publication
Technical Physics Letters, 2014, Vol 40, Issue 10, p887
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785014100216