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- Title
On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.
- Authors
Bilkan, Ç.; Badali, Y.; Fotouhi-Shablou, S.; Azizian-Kalandaragh, Y.; Altındal, Ş.
- Abstract
In this paper, we report the preparation and characterization of SnO-PVA nanocomposite film as interlayer for Schottky barrier diodes (SBDs). The possible current transport mechanisms (CTMs) of the prepared SBDs were investigated using the forward-bias current-voltage ( I- V) characteristics in the temperature range of 80-400 K. The structure of nanocomposite film was characterized by an X-ray diffractometer (XRD) and the surface morphology was investigated using a Scanning Electron Microscopy (SEM) at room temperature. The values of ideality factor ( n) and zero-bias barrier height ( $$\overline{\varPhi }_{\text{Bo}}$$ ) showed variation with temperature, such that they changed from 19.10 to 3.77 and 0.190 to 0.844 eV, respectively. $$\overline{\varPhi }_{\text{Bo}}$$ - n, $$\overline{\varPhi }_{\text{Bo}}$$ − q/2 kT, and n − q/2 kT plots were drawn to get evidence to the Gaussian Distribution (GD) of the barrier height (BH). These plots revealed two distinct linear regions with different slopes for low temperatures (80-160 K) (LTs) and high temperatures (180-400 K) (HTs). This behavior is an evidence to the existence double GD of BHs which provides an average value for BH ( $$\overline{\varPhi }_{\text{Bo}}$$ ) and a standard deviation (σ) for each region. The high value of n especially at low temperatures was attributed to the existence of interlayer: interface states ( N ) and barrier inhomogeneity at Au/n-Si interface. The values of $$\overline{\varPhi }_{\text{Bo}}$$ and σ were obtained from the intercept and slope of mentioned plots as 0.588 and 0.0768 V for LTs and 1.183 eV and 0.158 V for HTs, respectively. Moreover, the modified ln( I / T )− q σ/2 k T vs q/ kT plot also showed two linear regions. The values of $$\overline{\varPhi }_{\text{Bo}}$$ and effective Richardson constant ( A ) were extracted from the slope and intercept of this plot as 0.610 eV and 93.13 A/cm K for LTs and 1.235 eV and 114.65 A/cm K for HTs, respectively. The value of A for HTs is very close to the theoretical value (112 A/cm K) of n-type Si. Thus, the forward-bias I- V- T characteristics of Au/SnO-PVA/n-Si (SBDs) were successfully explained in terms of the thermionic-emission (TE) mechanism with a double GD of BHs.
- Subjects
SCHOTTKY barrier diodes; SEMICONDUCTOR diodes; SEMICONDUCTOR-metal boundaries; NANOCOMPOSITE materials; COMPOSITE materials
- Publication
Applied Physics A: Materials Science & Processing, 2017, Vol 123, Issue 8, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-017-1168-y