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- Title
Remote epitaxy of single-crystal rhombohedral WS<sub>2</sub> bilayers.
- Authors
Chang, Chao; Zhang, Xiaowen; Li, Weixuan; Guo, Quanlin; Feng, Zuo; Huang, Chen; Ren, Yunlong; Cai, Yingying; Zhou, Xu; Wang, Jinhuan; Tang, Zhilie; Ding, Feng; Wei, Wenya; Liu, Kaihui; Xu, Xiaozhi
- Abstract
Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V−1s−1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD. Rhombohedral-stacked (R-stacked) transition metal dichalcogenide bilayers exhibit remarkable properties, but their large-area epitaxial growth remains challenging. Here, the authors report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates.
- Subjects
BILAYERS (Solid state physics); SAPPHIRES; TRANSITION metals; CHARGE carrier mobility; SINGLE crystals; SYMMETRY breaking; EPITAXY
- Publication
Nature Communications, 2024, Vol 15, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-024-48522-8