We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
- Authors
Yunin, P. A.; Drozdov, Yu. N.; Khrykin, O. I.; Grigoryev, V. A.
- Abstract
Abstract: The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a-plane (110) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {114} and {105} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al2O3(110) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.
- Subjects
GALLIUM nitride; ANISOTROPY; VAPOR phase epitaxial growth; SAPPHIRES; EPITAXIAL layers; HETEROSTRUCTURES; THERMOELASTICITY; X-ray diffraction
- Publication
Semiconductors, 2018, Vol 52, Issue 11, p1412
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378261811026X