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- Title
Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology.
- Authors
Sisodia, Veenu; Dhole, S.
- Abstract
Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 10 to 1 × 10 ions/cm at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 10 ions/cm resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi was confirmed by X-ray analysis. Schottky barrier height was calculated from I-V measurements and the values drops down to 0.58 eV after irradiation at 1 × 10 ions/cm. The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi agglomeration and formation of Si-rich silicide islands.
- Subjects
ZIRCONIUM compounds synthesis; SILICIDES; THIN films; SILICON; SURFACE morphology; ELECTRON beams; SCANNING electron microscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 10, p3634
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1296-x