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- Title
Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (Adv. Funct. Mater. 21/2021).
- Authors
Achilli, Simona; Le, Nguyen H.; Fratesi, Guido; Manini, Nicola; Onida, Giovanni; Turchetti, Marco; Ferrari, Giorgio; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico
- Abstract
Ge-vacancy complex, Hubbard model, point defects, quantum transport, single-ion implantation Keywords: Ge-vacancy complex; Hubbard model; point defects; quantum transport; single-ion implantation EN Ge-vacancy complex Hubbard model point defects quantum transport single-ion implantation 1 1 1 05/26/21 20210521 NES 210521 In article number, 2011175, Simona Achilli, Enrico Prati, and co-workers report on the controlled creation of individual vacancies in silicon by implanting Ge atoms via single ion implantation, the quantum transport model of a disordered 1D array of Ge-V complexes, and its experimental characterization. Single-Ion Implantation: Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms (Adv. Funct.
- Subjects
GERMANIUM; HUBBARD model; ATOMS; SILICON; POINT defects; SEMIMETALS
- Publication
Advanced Functional Materials, 2021, Vol 31, Issue 21, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202170151