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- Title
Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide.
- Authors
Di Francesca, D.; Boukenter, A.; Agnello, S.; Alessi, A.; Girard, S.; Cannas, M.; Ouerdane, Y.
- Abstract
We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O2 atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO2) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm−1 with a full width at half maximum of 32 cm−1, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-nm line of the same laser. On the basis of several experimental evidences and some complementary literature data, the 896 cm−1 band is assigned to a resonance Raman scattering of oxygen dangling bonds, often called non-bridging oxygen hole centers. Copyright © 2016 John Wiley & Sons, Ltd.
- Subjects
SILICA; RESONANCE Raman spectroscopy; IONIZING radiation; ULTRAVIOLET lasers; POINT defects
- Publication
Journal of Raman Spectroscopy, 2017, Vol 48, Issue 2, p230
- ISSN
0377-0486
- Publication type
Article
- DOI
10.1002/jrs.5006