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- Title
Engineering high aspect-ratio silicon nanostructures.
- Authors
Tkach, R.; Averin, D.; Belarouci, A.
- Abstract
There has been huge interest in synthetizing silicon nanomaterials for various applications ranging from electronics to biology due to their attractive properties. For many device applications, it is pivotal to control the morphology and dimensions of silicon-based nanomaterials while considering a continuous demand for higher resolution and large aspect ratio. Such prerequisites concomitant with scalability, reliability, low cost and compatibility with existing manufacturing processes are not trivial to fulfill, bringing a need to develop nanofabrication techniques. In this regard, the work proposed in this paper involves the advancement of a top-down fabrication approach called "Metal-assisted Chemical Etching (MACE)" which has the potential to overcome the current limitations of 1D and 3D semiconductor nanomanufacturing processes. Large-area high density vertical silicon nanowire arrays are fabricated by this technology. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon substrate, which enables to precisely control the final diameter of the nanowires. The formation of ordered silicon nanowire arrays is due to selective and highly anisotropic etching of silicon induced by the gold patterned mask.
- Subjects
NANOSILICON; SILICON nanowires; LITHOGRAPHY; NANOFABRICATION; MANUFACTURING processes
- Publication
Physical Sciences & Technology, 2023, Vol 10, Issue 3/4, p87
- ISSN
2409-6121
- Publication type
Article
- DOI
10.26577/phst.2023.v10.i2.011