We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Photoelectric Properties of the n-SnSSe–p-InSe Heterojunctions.
- Authors
Katerinchuk, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Betsa, T. V.
- Abstract
Photoelectric properties of the n-SnSSe-p-InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS[sub 2-x]Se[sub x] alloy (x = 0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8-1.0 µm range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact.
- Subjects
SEMICONDUCTOR junctions; PHOTOELECTRICITY
- Publication
Technical Physics Letters, 2000, Vol 26, Issue 9, p754
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1315484