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Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells.
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- JETP Letters, 2021, v. 113, n. 8, p. 504, doi. 10.1134/S0021364021080038
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- Article
Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes.
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- JETP Letters, 2021, v. 113, n. 4, p. 252, doi. 10.1134/S0021364021040093
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- Article
Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides.
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- Technical Physics Letters, 2007, v. 33, n. 4, p. 333, doi. 10.1134/S1063785007040189
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- Article
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 467, doi. 10.1134/1.1262149
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- Article
III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared.
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- Scientific Reports, 2015, p. 17970, doi. 10.1038/srep17970
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- Article
InSe as a case between 3D and 2D layered crystals for excitons.
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- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-11487-0
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- Article
Polarization Conversion in MoS2 Flakes.
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- Semiconductors, 2020, v. 54, n. 11, p. 1509, doi. 10.1134/S1063782620110160
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- Article
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions.
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- Semiconductors, 2019, v. 53, n. 16, p. 2085, doi. 10.1134/S1063782619120121
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- Article
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.
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- Semiconductors, 2018, v. 52, n. 5, p. 667, doi. 10.1134/S1063782618050123
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- Article
Biexciton Binding Energy in Spherical Quantum Dots with Γ<sub>8</sub> Valence Band.
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- Semiconductors, 2018, v. 52, n. 5, p. 554, doi. 10.1134/S106378261805010X
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- Article
Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges.
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- Semiconductors, 2013, v. 47, n. 12, p. 1570, doi. 10.1134/S1063782613120191
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- Article
Density of States and Photoluminescence Spectra in the Dense Arrays of Epitaxial CdSe/ZnSe Quantum Dots with Gaussian Potential Profile.
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- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. 107, doi. 10.12693/APhysPolA.129.A-107
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- Article
AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1140, doi. 10.12693/APhysPolA.126.1140
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- Article
Electrical and optical properties of InN with periodic metallic in insertions.
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- Semiconductors, 2009, v. 43, n. 3, p. 285, doi. 10.1134/S106378260903004X
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- Article
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.
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- Semiconductors, 2008, v. 42, n. 12, p. 1420, doi. 10.1134/S1063782608120099
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- Article
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures.
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- Semiconductors, 2003, v. 37, n. 11, p. 1336, doi. 10.1134/1.1626220
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- Article
Low-Temperature Anti-Stokes Photoluminescence in CdSe/ZnSe Nanostructures.
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- Semiconductors, 2003, v. 37, n. 6, p. 699, doi. 10.1134/1.1582538
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- Article
Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE.
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- Semiconductors, 2003, v. 37, n. 5, p. 532, doi. 10.1134/1.1575356
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- Article
Improved Degradation Stability of Blue–Green II–VI Light-Emitting Diodes with Excluded Nitrogen-Doped ZnSe-Based Layers.
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- Semiconductors, 2001, v. 35, n. 11, p. 1340, doi. 10.1134/1.1418083
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- Article
BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum.
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- Semiconductors, 2001, v. 35, n. 5, p. 520, doi. 10.1134/1.1371614
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- Article
Blue-green ZnSe lasers with a new type of active region.
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- Semiconductors, 1999, v. 33, n. 9, p. 1016, doi. 10.1134/1.1187829
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- Article
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers.
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- Semiconductors, 1998, v. 32, n. 10, p. 1137, doi. 10.1134/1.1187546
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- Article
Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells
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- Semiconductors, 1998, v. 32, n. 7, p. 757
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- Article
Recombination dynamics in arrays of II-VI epitaxial quantum dots with Förster resonance energy transfer.
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- Physica Status Solidi (B), 2017, v. 254, n. 4, p. n/a, doi. 10.1002/pssb.201600414
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- Article
Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots.
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- Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1485, doi. 10.1002/pssb.201600095
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- Article
III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 845, doi. 10.1002/pssb.201552657
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- Article
Recombination of free and bound excitons in GaN.
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- Physica Status Solidi (B), 2008, v. 245, n. 9, p. 1723, doi. 10.1002/pssb.200844059
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- Article
Recent developments in the III-nitride materials.
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- Physica Status Solidi (B), 2007, v. 244, n. 6, p. 1759, doi. 10.1002/pssb.200674836
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- Article
Low-Temperature Kinetics of Localized Excitons in Quantum-Well Structures.
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- Physica Status Solidi (B), 1998, v. 205, n. 1, p. 203, doi. 10.1002/(SICI)1521-3951(199801)205:1<203::AID-PSSB203>3.0.CO;2-N
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- Article
InAs/AlGaAs quantum dots for single-photon emission in a red spectral range.
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- Scientific Reports, 2018, p. 1, doi. 10.1038/s41598-018-23687-7
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- Article
Passive and Active Q-Switching in an AlGaAs/GaAs SQW Laser. Giant Stark Shift in the Laser p-n SQW Heterostructure.
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- Physica Status Solidi (B), 1990, v. 159, n. 1, p. 197, doi. 10.1002/pssb.2221590122
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- Article
Excitonic Electroabsorption in GaAsGaAlAs Single Quantum Well Waveguide Structures.
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- Physica Status Solidi (B), 1988, v. 150, n. 2, p. 863, doi. 10.1002/pssb.2221500279
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- Article