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Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors.
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- Micromachines, 2024, v. 15, n. 9, p. 1148, doi. 10.3390/mi15091148
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High-frequency AlGaN/GaN HFETs with f<sub>T</sub>/f<sub>max</sub> of 149/263 GHz for D-band PA applications.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 15, p. 1340, doi. 10.1049/el.2016.1241
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- Article
High‐frequency AlGaN/GaN HFETs with f<sub>T</sub>/f<sub>max</sub> of 149/263 GHz for D‐band PA applications.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 14, p. 1340, doi. 10.1049/el.2016.1241
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- Article
Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 23, p. 1889, doi. 10.1049/el.2015.2885
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- Article
Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 1889, doi. 10.1049/el.2015.2885
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- Article
Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics.
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- Electronics (2079-9292), 2020, v. 9, n. 10, p. 1719, doi. 10.3390/electronics9101719
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- Article
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.
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- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04596-5
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- Article
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 5, p. 1, doi. 10.1007/s00339-018-1777-0
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- Article
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si<sub>3</sub>N<sub>4</sub> surface passivation.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 4, p. 1, doi. 10.1007/s00339-018-1702-6
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- Article
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes.
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- Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 3, p. 1271, doi. 10.1007/s00339-015-9504-6
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- Article
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of InAlN/AlN/GaN heterostructure field-effect transistors.
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- Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 4, p. 2065, doi. 10.1007/s00339-014-8403-6
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- Article
Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.
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- Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-31313-9
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- Article
miR-206 Inhibits Cell Proliferation and Extracellular Matrix Accumulation by Targeting Hypoxia-Inducible Factor 1-alpha (HIF-1α) in Mesangial Cells Treated with High Glucose.
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- Medical Science Monitor, 2019, v. 25, p. 10036, doi. 10.12659/MSM.918912
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- Article
Anxiety Level Detection Using BCI of Miner’s Smart Helmet.
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- Mobile Networks & Applications, 2018, v. 23, n. 2, p. 336, doi. 10.1007/s11036-017-0935-5
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- Article
Enhancement‐Mode β‐Ga<sub>2</sub>O<sub>3</sub> Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 3, p. 1, doi. 10.1002/pssr.201900586
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- Article
High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off Frequency.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 5, p. 1, doi. 10.1002/pssr.201700435
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- Article
Hemorrhagic cystitis induced by JC polyomavirus infection following COVID-19: a case report.
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- BMC Urology, 2024, v. 24, n. 1, p. 1, doi. 10.1186/s12894-024-01464-1
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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9
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- Article
High-uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 17, p. 895, doi. 10.1049/el.2020.1241
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- Article
High-frequency InAIN/GaN HFET with f<sub>max</sub> over 400 GHz.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 783, doi. 10.1049/el.2018.0247
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High‐frequency InAlN/GaN HFET with f<sub>max</sub> over 400 GHz.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 783, doi. 10.1049/el.2018.0247
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- Article
Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD.
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- Coatings (2079-6412), 2019, v. 9, n. 5, p. 281, doi. 10.3390/coatings9050281
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Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier.
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- Scientific Reports, 2016, p. 37415, doi. 10.1038/srep37415
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Study on the frequency characteristics of split-gate AlGaN/GaN HFETs.
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- Modern Physics Letters B, 2024, v. 38, n. 12, p. 1, doi. 10.1142/S0217984924500921
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- Article