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- Title
Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization.
- Authors
Kuchuk, A. V.; Klad’ko, V. P.; Machulin, V. F.; Piotrowska, A.
- Abstract
Ta-Si-N ternary barrier films were obtained by reactive rf magnetron sputtering of a Ta5Si3 target in an Ar-N2 gas discharge. The films were tested as diffusion barriers between Au and GaN layers. The efficiency of these films as diffusion-suppressing barriers is determined by transmission electron microscopy, secondary-ion mass spectroscopy, and X-ray diffraction analysis. It is shown that the diffusion barrier with optimized properties (Ta34Si25N41) in an Au/GaN metallization system can be used to advantage at temperatures above 800°C. A correlation between the composition, microstructure, resistivity, thermal stability, and diffusion-suppressing properties of the films is discussed.
- Subjects
MAGNETRONS; SPUTTERING (Physics); TRANSMISSION electron microscopy; X-ray diffraction; EFFECT of temperature on metals; THERMAL properties of semiconductors
- Publication
Technical Physics, 2006, Vol 51, Issue 10, p1383
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784206100227