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- Title
Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films.
- Authors
Li, W.P.; Liu, Y.M.; Zhang, R.; Chen, J.; Cheng, P.; Yuan, X.L.; Zhou, Y.G.; Shen, B.; Jiang, R.L.; Shi, Y.; Liu, Z.G.; Zheng, Y.D.
- Abstract
Abstract. Si-based metal-ferroelectric-semiconductor (MFS) structures without buffer layers between Si and ferroelectric films have been developed by depositing SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) directly on n-type (100)-oriented Si. Some effective processes are adopted to improve the electrical properties of these MFS structures. Contrary to the conventional MFS structures with top electrodes directly on ferroelectrics, our MFS structures have been developed with thin dense SiO[sub 2] films deposited between ferroelectric films and top electrodes. Due to the SiO[sub 2] films, the leakage current densities of MFS structures are reduced to 2 x 10[sup -8] A/cm[sup 2] under the bias of 5 V. The C - V electrical properties of the MFS structures are greatly improved after annealing at 400 Celsius in N[sub 2] ambient for 1 h. The C - V memory windows are increased to 3 V, which probably results from the decrease of the interface trap density at the Si/SBT interface.
- Subjects
FERROELECTRIC thin films; SEMICONDUCTORS; ELECTRIC properties of silicon; ELECTRONICS
- Publication
Applied Physics A: Materials Science & Processing, 2001, Vol 72, Issue 1, p85
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390000568