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- Title
Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La[sub 0.25] Sr[sub 0.75] CoO[sub 3] and SrRuO[sub 3] electrodes.
- Authors
Liu, Z.G.; Yin, J.; Wu, Z.C.
- Abstract
Abstract. New methods for fabricating highly (001)-oriented and complete (111)-textured Pb(Ta[sub 0.05]Zr[sub 0.48]Ti [sub 0.47])O[sub 3] (PTZT) films on Pt/TiO[sub 2]/SiO[sub 2] /Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La[sub 0.25]Sr[sub 0.75] CoO[sub 3] and SrRuO[sub 3] electrodes. The (001)-preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1 x 10[sup 10] switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the (111)-textured PTZT film capacitor retains 94.7% of its polarization after 1.5 x 10[sup 10] switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism.
- Subjects
OXIDES; ELECTRODES; PULSED laser deposition; FERROELECTRIC devices
- Publication
Applied Physics A: Materials Science & Processing, 1999, Vol 69, Issue 7, pS659
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390051499