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INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 5, p. 327, doi. 10.1142/S0219581X07004882
By:
- SIZOV, D. S.;
- SIZOV, V. S.;
- LUNDIN, V. V.;
- ZAVARIN, E. E.;
- TSATSUL'NIKOV, A. F.;
- MUSIKHIN, YU. G.;
- VLASOV, A. S.;
- LEDENTSOV, N. N.;
- MINTAIROV, A. M.;
- SUN, K.;
- MERZ, J.
Publication type:
Article
X-ray diffraction study of short-period AlN/GaN superlattices.
Published in:
Crystallography Reports, 2013, v. 58, n. 7, p. 953, doi. 10.1134/S1063774513070109
By:
- Kyutt, R.;
- Shcheglov, M.;
- Ratnikov, V.;
- Yagovkina, M.;
- Davydov, V.;
- Smirnov, A.;
- Rozhavskaya, M.;
- Zavarin, E.;
- Lundin, V.
Publication type:
Article
Stress Analysis of GaN-Based Heterostructures on Silicon Substrates.
Published in:
Semiconductors, 2024, v. 58, n. 2, p. 99, doi. 10.1134/S1063782624020015
By:
- Arteev, D. S.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Nikolaev, A. E.;
- Yagovkina, M. A.;
- Tsatsulnikov, A. F.
Publication type:
Article
Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells.
Published in:
Semiconductors, 2021, v. 55, n. 1, p. S49, doi. 10.1134/S1063782621090074
By:
- Ivanov, A. A.;
- Chaldyshev, V. V.;
- Zavarin, E. E.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Tsatsulnikov, A. F.
Publication type:
Article
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells.
Published in:
Semiconductors, 2019, v. 53, n. 14, p. 1900, doi. 10.1134/S1063782619140033
By:
- Arteev, D. S.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Zakheim, D. A.;
- Tsatsulnikov, A. F.
Publication type:
Article
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.
Published in:
Semiconductors, 2018, v. 52, n. 14, p. 1843, doi. 10.1134/S1063782618140257
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Zakheim, D. A.;
- Usov, S. O.;
- Tsatsulnikov, A. F.;
- Yagovkina, M. A.;
- Sim, P. E.;
- Demchenko, O. I.;
- Kurbanova, N. Y.;
- Velikovskiy, L. E.
Publication type:
Article
Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216
By:
- Tarasova, E.;
- Obolenskaya, E.;
- Hananova, A.;
- Obolensky, S.;
- Zemliakov, V.;
- Egorkin, V.;
- Nezhenzev, A.;
- Saharov, A.;
- Zazul'nokov, A.;
- Lundin, V.;
- Zavarin, E.;
- Medvedev, G.
Publication type:
Article
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1431, doi. 10.1134/S1063782616110051
By:
- Bolshakov, A.;
- Chaldyshev, V.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.
Publication type:
Article
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis.
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1383, doi. 10.1134/S1063782616100237
By:
- Tsatsulnikov, A.;
- Lundin, V.;
- Zavarin, E.;
- Yagovkina, M.;
- Sakharov, A.;
- Usov, S.;
- Zemlyakov, V.;
- Egorkin, V.;
- Bulashevich, K.;
- Karpov, S.;
- Ustinov, V.
Publication type:
Article
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs.
Published in:
Semiconductors, 2016, v. 50, n. 9, p. 1241, doi. 10.1134/S1063782616090232
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Sakharov, A.;
- Zavarin, E.;
- Usov, S.;
- Nikolaev, A.;
- Yagovkina, M.;
- Ustinov, V.;
- Cherkashin, N.
Publication type:
Article
Elastic strains and delocalized optical phonons in AlN/GaN superlattices.
Published in:
Semiconductors, 2016, v. 50, n. 8, p. 1043, doi. 10.1134/S1063782616080169
By:
- Pankin, D.;
- Smirnov, M.;
- Davydov, V.;
- Smirnov, A.;
- Zavarin, E.;
- Lundin, W.
Publication type:
Article
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263
By:
- Tikhomirov, V.;
- Zemlyakov, V.;
- Volkov, V.;
- Parnes, Ya.;
- Vyuginov, V.;
- Lundin, W.;
- Sakharov, A.;
- Zavarin, E.;
- Tsatsulnikov, A.;
- Cherkashin, N.;
- Mizerov, M.;
- Ustinov, V.
Publication type:
Article
Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1516, doi. 10.1134/S1063782615110238
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Sakharov, A.;
- Zavarin, E.;
- Usov, S.;
- Nikolaev, A.;
- Sinitsyn, M.;
- Cherkashin, N.;
- Karpov, S.
Publication type:
Article
Optical lattices of excitons in InGaN/GaN quantum well systems.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 4, doi. 10.1134/S1063782615010042
By:
- Chaldyshev, V.;
- Bolshakov, A.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.;
- Yagovkina, M.
Publication type:
Article
Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 53, doi. 10.1134/S1063782614010199
By:
- Lundin, W.;
- Nikolaev, A.;
- Sakharov, A.;
- Usov, S.;
- Zavarin, E.;
- Brunkov, P.;
- Yagovkina, M.;
- Cherkashin, N.;
- Tsatsulnikov, A.
Publication type:
Article
Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN.
Published in:
Semiconductors, 2013, v. 47, n. 3, p. 437, doi. 10.1134/S1063782613030226
By:
- Rozhavskaya, M.;
- Lundin, V.;
- Zavarin, E.;
- Troshkov, S.;
- Brunkov, P.;
- Tsatsulnikov, A.
Publication type:
Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1281, doi. 10.1134/S1063782612100168
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Zavarin, E.;
- Nikolaev, A.;
- Sakharov, A.;
- Rozhavskaya, M.;
- Usov, S.;
- Brunkov, P.;
- Synitsin, M.;
- Davydov, D.;
- Mizerov, M.;
- Cherkashin, N.
Publication type:
Article
InGaN/GaN heterostructures grown by submonolayer deposition.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Zavarin, E.;
- Sakharov, A.;
- Musikhin, Yu.;
- Usov, S.;
- Mizerov, M.;
- Cherkashin, N.
Publication type:
Article
Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
Published in:
Semiconductors, 2011, v. 45, n. 2, p. 271, doi. 10.1134/S1063782611020230
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Zavarin, E.;
- Nikolaev, A.;
- Sakharov, A.;
- Sizov, V.;
- Usov, S.;
- Musikhin, Yu.;
- Gerthsen, D.
Publication type:
Article
Study of tunneling transport of carriers in structures with an InGaN/GaN active region.
Published in:
Semiconductors, 2010, v. 44, n. 12, p. 1567, doi. 10.1134/S1063782610120067
By:
- Sizov, V.;
- Neploh, V.;
- Tsatsulnikov, A.;
- Sakharov, A.;
- Lundin, W.;
- Zavarin, E.;
- Nikolaev, A.;
- Mintairov, A.;
- Merz, J.
Publication type:
Article
Formation of composite InGaN/GaN/InAlN quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167
By:
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Kryzhanovskaya, N. V.;
- Lundin, W. V.;
- Saharov, A. V.;
- Usov, S. O.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Cherkashin, N. A.;
- Hytch, M.
Publication type:
Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
By:
- Usov, S. O.;
- Zavarin, E. E.;
- Tsatsul’nikov, A. F.;
- Lundin, V. V.;
- Sakharov, A. V.;
- Nikolaev, A. E.;
- Sinitsyn, M. A.;
- Kryzhanovskaya, N. V.;
- Troshkov, S. I.;
- Ledentsov, N. N.
Publication type:
Article
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X
By:
- Sizov, V. S.;
- Tsatsulnikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Cherkashin, N. A.;
- Hÿtch, M. J.;
- Nikolaev, A. E.;
- Mintairov, A. M.;
- Yan He;
- Merz, J. L.
Publication type:
Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Kryzhanovskaya, N. V.;
- Synitsin, M. A.;
- Sizov, V. S.;
- Zakgeim, A. L.;
- Mizerov, M. N.
Publication type:
Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Cherkashin, N. A.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Mizerov, M. N.;
- Park, Hee Seok;
- Hytch, M.;
- Hue, F.
Publication type:
Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Sakharov, A. V.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Davydov, D. V.;
- Cherkashin, N. A.;
- Tsatsulnikov, A. F.
Publication type:
Article
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.
Published in:
Semiconductors, 2009, v. 43, n. 7, p. 963, doi. 10.1134/S1063782609070276
By:
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Mikhailovsky, G. A.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Tsatsulnikov, A. F.
Publication type:
Article
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Usov, S. O.;
- Sizov, V. S.;
- Mikhailovsky, G. A.;
- Cherkashin, N. A.;
- Hytch, M.;
- Hue, F.;
- Yakovlev, E. V.;
- Lobanova, A. V.;
- Tsatsulnikov, A. F.
Publication type:
Article
Energy characteristics of excitons in structures based on InGaN alloys.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146
By:
- Usov, S.;
- Tsatsul’nikov, A.;
- Lundin, V.;
- Sakharov, A.;
- Zavarin, E.;
- Sinitsyn, M.;
- Ledentsov, N.
Publication type:
Article
Photoluminescence of localized excitons in InGan quantum dots.
Published in:
Semiconductors, 2008, v. 42, n. 2, p. 188, doi. 10.1134/S1063782608020115
By:
- Usov, S.;
- Tsatsul’nikov, A.;
- Lundin, V.;
- Sakharov, A.;
- Zavarin, E.;
- Ledentsov, N.
Publication type:
Article
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193
By:
- Sizov, D. S.;
- Zavarin, E. E.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Musikhin, Yu. G.;
- Sizov, V. S.;
- Suris, R. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
The study of lateral carrier transport in structures with InGaN quantum dots in the active region.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113
By:
- Sizov, V. S.;
- Sizov, D. S.;
- Mikhailovskiĭ, G. A.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Ledentsov, N. N.
Publication type:
Article
Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.
Published in:
Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858
By:
- Blank, T. V.;
- Goldberg, Yu. A.;
- Zavarin, E. E.;
- Konstantinov, O. V.;
- Shmidt, N. M.
Publication type:
Article
A Study of Carrier Statistics in InGaN/GaN LED Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.
Published in:
Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters.
Published in:
Semiconductors, 2005, v. 39, n. 1, p. 100, doi. 10.1134/1.1852655
By:
- Soshnikov, I. P.;
- Ledentsov, N. N.;
- Tsatsul'nikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. A.;
- Fomin, A. V.;
- Litvinov, D.;
- Hahn, E.;
- Gerthsen, D.
Publication type:
Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
Published in:
Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
By:
- Lundin, V. V.;
- Zavarin, E. E.;
- Besulkin, A. I.;
- Gladyshev, A. G.;
- Sakharov, A. V.;
- Kokorev, M. F.;
- Shmidt, N. M.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Kakanakov, R.
Publication type:
Article
Quantitative studies by differential scanning calorimetry of the reaction between hydrogen peroxide and lignocellulose.
Published in:
Journal of Applied Polymer Science, 1983, v. 28, n. 2, p. 647, doi. 10.1002/app.1983.070280220
By:
- Nguyen, Tinh;
- Zavarin, E.;
- Barrall, E. M.
Publication type:
Article
Differential Scanning Calorimetric and Infra-Red Spectroscopic Studies of Interactions between Lignocellulosic Materials, Hydrogen Peroxide, and Furfuryl Alcohol.
Published in:
Holzforschung: International Journal of the Biology, Chemistry, Physics, & Technology of Wood, 1984, v. 38, n. 3, p. 119
By:
- Philippou, J. L.;
- Zavarin, E.
Publication type:
Article
Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 908, doi. 10.1134/S1063785008110023
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Yagovkina, M. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Lundina, E. Yu.;
- Sakharov, A. V.;
- Troshkov, S. I.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Influence of the Carrier Gas Composition on Metalorganic Vapor Phase Epitaxy of Gallium Nitride.
Published in:
Technical Physics Letters, 2005, v. 31, n. 4, p. 293, doi. 10.1134/1.1920375
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sizov, D. S.
Publication type:
Article
Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells.
Published in:
Semiconductors, 2002, v. 36, n. 6, p. 641, doi. 10.1134/1.1485662
By:
- Andrianov, A. V.;
- Nekrasov, V. Yu.;
- Shmidt, N. M.;
- Zavarin, E. E.;
- Usikov, A. S.;
- Zinov’ev, N. N.;
- Tkachuk, M. N.
Publication type:
Article
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1301, doi. 10.1134/1.1325427
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Zavarin, E. E.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Usikov, A. S.;
- Fedirko, V. A.
Publication type:
Article
The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.
Published in:
Technical Physics Letters, 2020, v. 46, n. 12, p. 1211, doi. 10.1134/S1063785020120263
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Brunkov, P. N.;
- Tsatsulnikov, A. F.
Publication type:
Article
Insulating GaN Epilayers Co-Doped with Iron and Carbon.
Published in:
Technical Physics Letters, 2019, v. 45, n. 7, p. 723, doi. 10.1134/S106378501907023X
By:
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Zakgeim, D. A.;
- Lundina, E. Yu.;
- Brunkov, P. N.;
- Tsatsulnikov, A. F.
Publication type:
Article
The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas.
Published in:
Technical Physics Letters, 2018, v. 44, n. 7, p. 577, doi. 10.1134/S1063785018070106
By:
- Lundin, V. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Zakgeim, D. A.;
- Nikolaev, A. E.;
- Brunkov, P. N.;
- Yagovkina, M. A.;
- Tsatsul’nikov, A. F.
Publication type:
Article
Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel.
Published in:
Technical Physics Letters, 2016, v. 42, n. 11, p. 1079, doi. 10.1134/S1063785016110031
By:
- Emtsev, V.;
- Zavarin, E.;
- Kozlovskii, M.;
- Kudoyarov, M.;
- Lundin, V.;
- Oganesyan, G.;
- Petrov, V.;
- Poloskin, D.;
- Sakharov, A.;
- Troshkov, S.;
- Shmidt, N.;
- V'yuginov, V.;
- Zybin, A.;
- Parnes, Ya.;
- Vidyakin, S.;
- Gudkov, A.;
- Chernyakov, A.;
- Kozlovskii, V.
Publication type:
Article
The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial.
Published in:
Technical Physics Letters, 2016, v. 42, n. 7, p. 701, doi. 10.1134/S1063785016070075
By:
- Emtsev, V.;
- Zavarin, E.;
- Oganesyan, G.;
- Petrov, V.;
- Sakharov, A.;
- Shmidt, N.;
- V'yuginov, V.;
- Zybin, A.;
- Parnes, Ya.;
- Vidyakin, S.;
- Gudkov, A.;
- Chernyakov, A.
Publication type:
Article

Found: 66