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Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191
By:
- Terent'ev, Ya. V.;
- Mukhin, M. S.;
- Solov'ev, V. A.;
- Semenov, A. N.;
- Meltser, B. Ya.;
- Usikova, A. A.;
- Ivanov, S. V.
Publication type:
Article
Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.
Published in:
Semiconductors, 2010, v. 44, n. 5, p. 672, doi. 10.1134/S1063782610050222
By:
- Semenov, A. N.;
- Terent'ev, Ya. V.;
- Meltser, B. Ya.;
- Solov'ev, V. A.;
- Popova, T. V.;
- Nashchekin, A. V.;
- Andreev, I. A.;
- Kunitsyna, E. V.;
- Usikova, A. A.;
- Yakovlev, Yu. P.;
- Ivanov, S. V.
Publication type:
Article
Spin injection in GaAs/GaSb quantum-well heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107
By:
- Terent'ev, Ya. V.;
- Toropov, A. A.;
- Meltser, B. Ya.;
- Semenov, A. N.;
- Solov'ev, V. A.;
- Sedova, I. V.;
- Usikova, A. A.;
- Ivanov, S. V.
Publication type:
Article
Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs.
Published in:
Semiconductors, 2009, v. 43, n. 5, p. 635, doi. 10.1134/S1063782609050182
By:
- Terent'ev, Ya. V.;
- Lyublinskaya, O. G.;
- Toropov, A. A.;
- Meltser, B. Ya.;
- Semenov, A. N.;
- Solov'ev, V. A.;
- Ivanov, S. V.
Publication type:
Article
Observation of a Light-Induced Nonohmic Current in a Toroidal-Moment-Possessing Nanostructure.
Published in:
JETP Letters, 2002, v. 76, n. 7, p. 469, doi. 10.1134/1.1528704
By:
- Emelyanov, S. A.;
- Meltser, B. Ya.;
- Ivanov, S. V.
Publication type:
Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
By:
- Ivanov, S. V.;
- Moiseev, K. D.;
- Kaıgorodov, V. A.;
- Solov’ev, V. A.;
- Sorokin, S. V.;
- Meltser, B. Ya.;
- Grebenshchikova, E. A.;
- Sedova, I. V.;
- Terent’ev, Ya. V.;
- Semenov, A. N.;
- Astakhova, A. P.;
- Mikhaılova, M. P.;
- Toropov, A. A.;
- Yakovlev, Yu. P.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells.
Published in:
Semiconductors, 2002, v. 36, n. 12, p. 1385
By:
- Solov’ev, V. A.;
- Terent’ev, Ya. V.;
- Toropov, A. A.;
- Meltser, B. Ya.;
- Semenov, A. N.;
- Sitnikova, A. A.;
- Ivanov, S. V.;
- Meyer, J. R.;
- Kop’ev, P. S.
Publication type:
Article
GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics.
Published in:
Semiconductors, 2002, v. 36, n. 7, p. 816
By:
- Solov’ev, V. A.;
- Toropov, A. A.;
- Meltser, B. Ya.;
- Terent’ev, Ya. A.;
- Kyutt, R. N.;
- Sitnikova, A. A.;
- Semenov, A. N.;
- Ivanov, S. V.;
- Motlan;
- Goldys, E. M.;
- Kop’ev, P. S.
Publication type:
Article
Effect of spinorbit interaction on cyclotron resonance in InAs quantum wells.
Published in:
Physica Status Solidi (B), 2003, v. 240, n. 3, p. R8, doi. 10.1002/pssb.200309019
By:
- Yu. B. Vasilyev;
- S. D. Suchalkin;
- S. V. Ivanov;
- B. Ya. Meltser;
- P. S. Kop'ev
Publication type:
Article

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