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Flow of Polyoxadiazole Fiber-Forming Systems through Spinneret Capillaries under Dry-Wet Formation Conditions.
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- Fibre Chemistry, 2024, v. 55, n. 5, p. 275, doi. 10.1007/s10692-024-10476-4
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- Publication type:
- Article
A Textile Material for Filtrering Hot Process Gases and Industrial Air.
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- Fibre Chemistry, 2023, v. 54, n. 6, p. 352, doi. 10.1007/s10692-023-10406-w
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- Publication type:
- Article
Method for Producing Nonwoven Fabrics Based on Arcelon Fibre for Filtering Air Mixtures.
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- Fibre Chemistry, 2021, v. 53, n. 4, p. 287, doi. 10.1007/s10692-022-10286-6
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- Article
Investigation and Analysis of the Properties of Polyparaphenylene-1,3,4-Oxadiazole Fibers Intended for Textile Products.
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- Fibre Chemistry, 2021, v. 53, n. 4, p. 268, doi. 10.1007/s10692-022-10282-w
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- Publication type:
- Article
Study and Analysis of the Properties of Poly (Paraphenylene-1,3,4-Oxadiazole) Fibers Designed for Textile Items.
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- Fibre Chemistry, 2020, v. 51, n. 5, p. 384, doi. 10.1007/s10692-020-10116-7
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- Publication type:
- Article
Textile Auxiliaries in Production of Aramid Fibres and Articles Made from Them.
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- Fibre Chemistry, 2004, v. 36, n. 2, p. 133, doi. 10.1023/B:FICH.0000033901.42107.bd
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- Article
Monopolarity of Hot Charge Carrier Multiplication in A<sup>III</sup>B<sup>V</sup> Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review).
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- Semiconductors, 2023, v. 57, n. 12, p. 554, doi. 10.1134/S1063782623090130
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- Article
Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination.
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- Semiconductors, 2020, v. 54, n. 14, p. 1820, doi. 10.1134/S1063782620140055
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- Article
Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review).
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- Semiconductors, 2020, v. 54, n. 12, p. 1527, doi. 10.1134/S1063782620120210
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- Article
Discovery of III–V Semiconductors: Physical Properties and Application.
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- Semiconductors, 2019, v. 53, n. 3, p. 273, doi. 10.1134/S1063782619030126
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- Publication type:
- Article
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE.
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- Semiconductors, 2019, v. 53, n. 1, p. 46, doi. 10.1134/S1063782619010159
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- Publication type:
- Article
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW.
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- Semiconductors, 2018, v. 52, n. 8, p. 1037, doi. 10.1134/S1063782618080146
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- Publication type:
- Article
Enhancement of Photoconductivity by Carrier Screening Effect in <italic>n</italic>-GaSb/InAs/<italic>p</italic>-GaSb Heterostructure with Single Deep Quantum Well.
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- Semiconductors, 2018, v. 52, n. 4, p. 493, doi. 10.1134/S1063782618040115
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- Publication type:
- Article
High-temperature luminescence in an <i>n</i>-GaSb/<i>n</i>-InGaAsSb/<i>p</i>-AlGaAsSb light-emitting heterostructure with a high potential barrier.
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- Semiconductors, 2013, v. 47, n. 9, p. 1258, doi. 10.1134/S1063782613090194
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- Article
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.
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- Semiconductors, 2010, v. 44, n. 1, p. 66, doi. 10.1134/S1063782610010100
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- Publication type:
- Article
Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.
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- Semiconductors, 2008, v. 42, n. 9, p. 1108, doi. 10.1134/S1063782608090182
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- Publication type:
- Article
High-efficiency LEDs based on n-GaSb/ p-GaSb/ n-GaInAsSb/ P-AlGaAsSb type-II thyristor heterostructures.
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- Semiconductors, 2007, v. 41, n. 7, p. 855, doi. 10.1134/S1063782607070135
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- Publication type:
- Article
Electrical properties of isotype N <sup>+</sup>-GaSb/n<sup>0</sup>-GaInAsSb/ N <sup>+</sup>-GaAlAsSb type-II heterojunctions.
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- Semiconductors, 2007, v. 41, n. 2, p. 150, doi. 10.1134/S1063782607020066
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- Publication type:
- Article
Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system.
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- Semiconductors, 2007, v. 41, n. 2, p. 161, doi. 10.1134/S1063782607020091
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- Publication type:
- Article
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb.
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- Semiconductors, 2006, v. 40, n. 5, p. 503, doi. 10.1134/S1063782606050022
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- Article
Impact ionization in A<sup>III</sup>B<sup>V</sup> semiconductors in high electric fields.
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- Physica Status Solidi (B), 1987, v. 140, n. 1, p. 9, doi. 10.1002/pssb.2221400102
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- Publication type:
- Article
High Energy Distribution Function in an Electric Field and Electron Impact Ionization in A<sup>III</sup>B<sup>V</sup> Semiconductors.
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- Physica Status Solidi (B), 1982, v. 113, n. 1, p. 125, doi. 10.1002/pssb.2221130112
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- Publication type:
- Article
The Effect of a Magnetic Field upon Illuminated InAs p-n Junctions.
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- Physica Status Solidi (B), 1967, v. 19, n. 1, p. 429, doi. 10.1002/pssb.19670190144
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- Article
Spectral Response of the Photoeffects in InAs.
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- Physica Status Solidi (B), 1965, v. 11, n. 2, p. 529, doi. 10.1002/pssb.19650110204
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- Publication type:
- Article
Electrical properties of photodiodes based on p-GaSb/ p-GaInAsSb/ N-GaAlAsSb heterojunctions.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 937, doi. 10.1134/S1063785008110114
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- Publication type:
- Article
Impact-ionization-stimulated electroluminescence in isotype n-GaSb/ n-AlGaAsSb/ n-GaInAsSb heterostructures.
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- Technical Physics Letters, 2007, v. 33, n. 12, p. 987, doi. 10.1134/S1063785007120012
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- Publication type:
- Article
Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range.
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- Technical Physics Letters, 2007, v. 33, n. 10, p. 809, doi. 10.1134/S1063785007100021
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- Article
InSb/InAs quantum dots grown by liquid phase epitaxy.
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- Technical Physics Letters, 2007, v. 33, n. 4, p. 295, doi. 10.1134/S1063785007040074
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- Article
Growth of InAs photodiode structures from metalorganic compounds.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 247, doi. 10.1134/1.1262072
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- Article
Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure.
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- Technical Physics Letters, 1997, v. 23, n. 5, p. 364, doi. 10.1134/1.1261682
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- Article
New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers.
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- Technical Physics Letters, 1997, v. 23, n. 3, p. 233
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- Publication type:
- Article
Properties of the electron channel in single GaInAsSb/p-InAs heterostructures.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 128, doi. 10.1134/1.1261586
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- Publication type:
- Article
Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 151, doi. 10.1134/1.1261568
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- Article
Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode.
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- 2016
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- Publication type:
- Conference Paper/Materials
Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter.
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- Acta Physica Polonica: A, 2014, v. 125, n. 2, p. 411, doi. 10.12693/APhysPolA.125.411
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- Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
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- Article
Photodiodes for a 1.5–4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures.
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- Semiconductors, 2001, v. 35, n. 4, p. 453, doi. 10.1134/1.1365194
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- Article
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.
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- Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157
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- Article
Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.
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- Semiconductors, 2000, v. 34, n. 12, p. 1376, doi. 10.1134/1.1331794
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- Article
Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.
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- Semiconductors, 2000, v. 34, n. 2, p. 189, doi. 10.1134/1.1187965
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- Article
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions.
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- Semiconductors, 1999, v. 33, n. 3, p. 350, doi. 10.1134/1.1187693
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- Publication type:
- Article
Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure.
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- Semiconductors, 1999, v. 33, n. 3, p. 355, doi. 10.1134/1.1187694
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- Publication type:
- Article
Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary.
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- Semiconductors, 1999, v. 33, n. 2, p. 216, doi. 10.1134/1.1187673
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- Publication type:
- Article
Scanning electron microscopy of long-wavelength laser structures.
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- Semiconductors, 1998, v. 32, n. 11, p. 1157
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- Publication type:
- Article
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs.
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- Semiconductors, 1998, v. 32, n. 2, p. 195, doi. 10.1134/1.1187343
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- Publication type:
- Article
Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures.
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- Semiconductors, 1997, v. 31, n. 10, p. 1046, doi. 10.1134/1.1187022
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- Article
Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution.
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- Semiconductors, 1997, v. 31, n. 8, p. 763, doi. 10.1134/1.1187244
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- Publication type:
- Article
Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures.
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- Semiconductors, 1997, v. 31, n. 6, p. 556, doi. 10.1134/1.1187217
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- Publication type:
- Article
Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.
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- Semiconductors, 1997, v. 31, n. 6, p. 560, doi. 10.1134/1.1187218
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- Article
Solid solution In[sub x]Ga[sub 1-x]As[sub y]Sb[sub z]P[sub 1-y-z]: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy.
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- Semiconductors, 1997, v. 31, n. 4, p. 344, doi. 10.1134/1.1187160
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- Article