We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
- Authors
Seredin, P. V.; Goloshchapov, D. L.; Zolotukhin, D. S.; Lenshin, A. S.; Lukin, A. N.; Mizerov, A. M.; Nikitina, E. V.; Arsentyev, I. N.; Leiste, H.; Rinke, M.
- Abstract
Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.
- Subjects
BUFFER layers; LASER-induced breakdown spectroscopy; OPTICAL properties; HETEROSTRUCTURES; ULTRAVIOLET spectroscopy; NITROGEN plasmas
- Publication
Semiconductors, 2019, Vol 53, Issue 1, p65
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782619010172