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- Title
Preparation and dielectric properties of BaTiO-based X8R ceramics co-doped with BIT and CBS glass.
- Authors
Chen, Guo-hua; Yang, Yun; Kang, Xiao-ling; Yuan, Chang-lai; Zhou, Chang-rong
- Abstract
The effects of BiTiO (BIT) on phase purity and dielectric properties of BaTiO (BT) ceramics have been investigated. Results show that BT samples doped with 1-3 mol% BIT adopt a single phase. However, secondary phase BiTiO is observed when BIT content exceeds 3 mol%. Tetragonality and the Curie temperature ( T) firstly increase and then decreases with an increase in BIT content. The 3 mol% BIT-doped BT ceramic sintered at 1,250 °C exhibits good dielectric properties of ε = 2,692, tan δ = 0.0152, ρ = 5.8 × 10Ω cm, and the variation of dielectric constant as compared with that at room temperature is about −20 % at −55 °C and less than 11 % at 150 °C. It is found that the addition of calcium borosilicate glass (CBS) in BT-BIT ceramics can effectively lower the sintering temperature from 1,250 to 1,050 °C and further enhance the capacitance temperature stability. The permittivity decreases with an increase in CBS content from 1 to 10 wt%. Secondary phase BaBiTiO exists in the CBS doped BT-3BIT systems. All of CBS doped samples satisfy the X8R specification. Typically, the sample with 3 wt% CBS has ε = 1,789, tan δ = 0.0115, ρ = 9.67 × 10Ω cm. The variation of permittivity as compared with that at room temperature is about −12 % at −55 °C and less than ± 11 % at 150 °C. The as-prepared materials have great potential as EIA X8R-type multilayer ceramic capacitors.
- Subjects
ELECTRIC properties of barium titanate; CURIE temperature; PERMITTIVITY; CERAMIC capacitors; CAPACITANCE-voltage characteristics
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 1, p196
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-012-0710-0