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- Title
High-frequency AlGaN/GaN HFETs with f<sub>T</sub>/f<sub>max</sub> of 149/263 GHz for D-band PA applications.
- Authors
Yuanjie Lv; Xubo Song; Hongyu Guo; Yulong Fang; Zhihong Feng
- Abstract
Scaled AlGaN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) were fabricated and characterised on SiC substrate. In the device, scaled source-to-drain distance (Lsd) of 600 nm was realised by employing non-alloyed regrown n+-GaN ohmic contacts. A 60 nm T-shaped AlGaN/GaN HFETs showed excellent DC and RF performance afTer gate recess. A record extrinsic transconductance (gm) of 764 mS/mm was obtained in the AlGaN/GaN HFETs. Moreover, the maximum fT and fmax of the fabricated device reach to 149 and 263 GHz at the same bias, exhibiting a record-high value of fT*fmax. This indicates that the AlGaN/GaN HFETs still have the potential for D-band (110-170 GHz) power-amplifier application with further optimisation.
- Subjects
EFFICIENCY of power amplifiers; COMPLEMENTARY metal oxide semiconductors; PERFORMANCE of power amplifiers; CAPACITORS; POWER density
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 15, p1340
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.1241