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- Title
Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg<sub>3</sub>(Bi,Sb)<sub>2</sub>.
- Authors
Chen, Nan; Zhu, Hangtian; Li, Guodong; Fan, Zhen; Zhang, Xiaofan; Yang, Jiawei; Lu, Tianbo; Liu, Qiulin; Wu, Xiaowei; Yao, Yuan; Shi, Youguo; Zhao, Huaizhou
- Abstract
The low-temperature thermoelectric performance of Bi-rich n-type Mg3(Bi,Sb)2 was limited by the electron transport scattering at grain boundaries, while removing grain boundaries and bulk crystal growth of Mg-based Zintl phases are challenging due to the volatilities of elemental reactants and their severe corrosions to crucibles at elevated temperatures. Herein, for the first time, we reported a facile growth of coarse-grained Mg3Bi2-xSbx crystals with an average grain size of ~800 μm, leading to a high carrier mobility of 210 cm2 · V−1 · s−1 and a high z of 2.9 × 10−3 K−1 at 300 K. A Δ T of 68 K at Th of 300 K, and a power generation efficiency of 5.8% below 450 K have been demonstrated for Mg3Bi1.5Sb0.5- and Mg3Bi1.25Sb0.75-based thermoelectric modules, respectively, which represent the cutting-edge advances in the near-room temperature thermoelectrics. In addition, the developed grain growth approach can be potentially extended to broad Zintl phases and other Mg-based alloys and compounds. It is challenging to increase carrier mobility in n-type Mg3(Bi,Sb)2 due to grain-boundary scattering. Here, authors reported a facile growth of coarse-grained Mg3(Bi,Sb)2 crystals with high carrier mobility. The as-fabricated module shows cooling performance comparable to commercial Bi2Te3 module.
- Subjects
THERMOELECTRIC cooling; CRYSTAL grain boundaries; LOW temperatures; ELECTRON transport; CHARGE carrier mobility; BISMUTH; MAGNESIUM; N-type semiconductors
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-40648-5