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- Title
In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.
- Authors
Cai, Xiangbin; Chen, Chao; Xie, Lin; Wang, Changan; Gui, Zixin; Gao, Yuan; Kentsch, Ulrich; Zhou, Guofu; Gao, Xingsen; Chen, Yu; Zhou, Shengqiang; Gao, Weibo; Liu, Jun-Ming; Zhu, Ye; Chen, Deyang
- Abstract
The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics. The correlation between charged and antiphase states in BiFeO3 remain elusive. Here, the authors report a fabrication of in-plane charged antiphase boundaries in BiFeO3 thin films, revealing the atomic bonding configurations and atomically sharp 180° polarization reversal of such boundaries.
- Subjects
ANTIPHASE boundaries; THIN films; TRANSPORT planes; PHOTOVOLTAIC effect; ELECTRON microscopy; NANOELECTRONICS
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-44091-4